Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers -: art. no. 071105

被引：17

作者：

Damilano, B

Barjon, J

Duboz, JY

Massies, J

Hierro, A

Ulloa, JM

Calleja, E

机构：

[1] CNRS, Ctr Rech Hetero Epitaxie Appl, F-06560 Valbonne, France

[2] Univ Politecn Madrid, ISOM, E-28040 Madrid, Spain

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 07期

关键词：

D O I：

10.1063/1.1863433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conjugated effect of growth temperature and in situ thermal annealing on the photoluminescence properties of In0.4Ga0.6As0.985N0.015/GaAs quantum wells (QWs) grown by molecular-beam epitaxy has been investigated. The interplay between growth temperature and annealing effects is such as the optimum growth temperature is not the same for as-grown and annealed samples. By using the combination of a low growth temperature and a high in situ annealing temperature, separate confinement heterostructure laser diodes with a single In0.4Ga0.6As1-xNx (x = 0.015-0.021)/GaAs QW have been grown. The broad area devices emit from 1.34 to 1.44 mum at room temperature with a threshold current density of 1500-1755 A/cm(2). (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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