Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography

被引：12

作者：

Hernandez-Saz, J. ^{[1
]}

Herrera, M. ^{[1
]}

Delgado, F. J. ^{[1
]}

Duguay, S. ^{[2
]}

Philippe, T. ^{[3
]}

Gonzalez, M. ^{[4
,5
]}

Abell, J. ^{[5
]}

Walters, R. J. ^{[5
]}

Molina, S. I. ^{[1
]}

机构：

[1] Univ Cadiz, Fac Ciencias, Dpto Ciencia Mat eIM & QI, IMEYMAT, Campus Rio San Pedro, Cadiz 11510, Spain

[2] Normandie Univ, UNIROUEN, INSA Rouen, CNRS,Grp Phys Mat, F-76000 Rouen, France

[3] CNRS, Ecole Polytech, Condensed Matter Phys, F-91128 Palaiseau, France

[4] Sotera Def Solut, 430 Natl Business Pkwy, Annapolis Jct, MD 20701 USA

[5] US Naval Res Lab, 4555 Overlook Ave SW, Washington, DC 20375 USA

来源：

NANOTECHNOLOGY | 2016年 / 27卷 / 30期

关键词：

triple junction solar cell; InAlAsSb; atom probe tomography; compositional distribution; radial distribution function; ALLOYS; PROPERTY; BAND;

D O I：

10.1088/0957-4484/27/30/305402

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple junction solar cells (TJSCs) has shown the existence of In- and Sb-rich regions in the material. The composition variation found is not evident from the direct observation of the 3D atomic distribution and because of this a statistical analysis has been required. From previous analysis of these samples, it is shown that the small compositional fluctuations determined have a strong effect on the optical properties of the material and ultimately on the performance of TJSCs.

引用

页数：6

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