Realistic modeling of the electronic structure and the effect of correlations for Sn/Si(111) and Sn/Ge(111) surfaces

被引:24
|
作者
Schuwalow, Sergej [1 ]
Grieger, Daniel [1 ]
Lechermann, Frank [1 ]
机构
[1] Univ Hamburg, Inst Theoret Phys 1, D-20355 Hamburg, Germany
关键词
PHASE-TRANSITION; MOTT INSULATORS; BAND-STRUCTURE; HUBBARD-MODEL; SYSTEMS;
D O I
10.1103/PhysRevB.82.035116
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The correlated electronic structure of the submonolayer surface systems Sn/Si(111) and Sn/Ge(111) is investigated by density-functional theory and its combination with explicit many-body methods. Namely, the dynamical mean-field theory and the slave-boson mean-field theory are utilized for the study of the intriguing interplay between structure, bonding, and electronic correlation. In this respect, explicit low-energy one-and four (sp(2)-like)-band models are derived using maximally localized Wannier(-type) functions. In view of the possible low-dimensional magnetism in the Sn submonolayers we compare different types of magnetic orders and indeed find a 120 noncollinear ordering to be stable in the ground state. With single-site methods and cellular-cluster extensions the influence of a finite Hubbard U on the surface states in a planar and a reconstructed structural geometry is furthermore elaborated.
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收藏
页数:11
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