Hydrogen adsorption and storage on palladium-decorated graphene with boron dopants and vacancy defects: A first-principles study
被引:30
作者:
Ma, Ling
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Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
Ningxia Univ, Sch Phys Elect Informat Engn, Ningxia 750021, Peoples R ChinaShaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
Ma, Ling
[1
,2
]
Zhang, Jian-Min
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Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R ChinaShaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
Zhang, Jian-Min
[1
]
Xu, Ke-Wei
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机构:
Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R ChinaShaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
Xu, Ke-Wei
[3
]
Ji, Vincent
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Univ Paris 11, ICMMO, LEMHE, F-91405 Orsay, FranceShaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
Ji, Vincent
[4
]
机构:
[1] Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
[2] Ningxia Univ, Sch Phys Elect Informat Engn, Ningxia 750021, Peoples R China
[3] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China
[4] Univ Paris 11, ICMMO, LEMHE, F-91405 Orsay, France
The geometric stability and hydrogen capacity of Pd-decorated graphene with experimentally realizable boron dopants and various vacancy defects including single carbon vacancy (SV), "585"-type double carbon vacancy (585 DCV) and "555-777"-type double carbon vacancy (555-777 DCV) are investigated using the first-principles calculations based on density functional theory (DFT). It is found that among the four types of defective structures, Pd's binding energies on SV and 585 DCV defect graphene sheets exceed the cohesive energy of the Pd metal bulk, thus Pd atoms are well dispersed above defective graphene sheets and effectively prevent Pd clustering. Up to three H-2 molecules can bind to Pd atom on graphene with B dopants, SV and 555-777 DCV defects. For the cases of Pd-decorated graphene with B dopants and 555-777 DCV defect, a single H-2 or two H-2 are molecularly chemisorbed to Pd atom in the form of Pd-H-2 Kubas complex, where the stretched H-H bond is relaxed but not dissociated. Out of two adsorbed H-2, the third H-2 binds to Pd atom by small van der Waals (vdW) forces and the nature of bonding is very weak physisorption. Different from above two cases, three H-2 are all molecularly chemisorbed to Pd atom with stretched H-H bond for Pd-decorated SV defect graphene, the hybridization of the Pd-4d orbitals with the H-2-sigma orbitals and the electrostatic interaction between the Pd cation and the induced H-2 dipole both contribute to the H-2 molecules binding, and the binding energies of 0.25-0.41 eV/H-2 is in the range that can permit H-2 molecules recycling at ambient conditions. (C) 2014 Elsevier B.V. All rights reserved.
机构:
Jadavpur Univ, Thin Film & NanoSci Lab, Dept Phys, Kolkata 700032, W Bengal, IndiaJadavpur Univ, Thin Film & NanoSci Lab, Dept Phys, Kolkata 700032, W Bengal, India
Sen, D.
;
Mitra, M. K.
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Jadavpur Univ, Sch Mat Sci & Nanotechnol, Kolkata 700032, W Bengal, IndiaJadavpur Univ, Thin Film & NanoSci Lab, Dept Phys, Kolkata 700032, W Bengal, India
Mitra, M. K.
;
Chattopadhyay, K. K.
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Jadavpur Univ, Thin Film & NanoSci Lab, Dept Phys, Kolkata 700032, W Bengal, India
Jadavpur Univ, Sch Mat Sci & Nanotechnol, Kolkata 700032, W Bengal, IndiaJadavpur Univ, Thin Film & NanoSci Lab, Dept Phys, Kolkata 700032, W Bengal, India
机构:
Indian Inst Technol, AENL, NFMTC, Madras 600036, Tamil Nadu, India
Indian Inst Technol, Low Temp Phys Lab, Dept Phys, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, AENL, NFMTC, Madras 600036, Tamil Nadu, India
Vinayan, B. P.
;
Sethupathi, K.
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Indian Inst Technol, Low Temp Phys Lab, Dept Phys, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, AENL, NFMTC, Madras 600036, Tamil Nadu, India
Sethupathi, K.
;
Ramaprabhu, S.
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Indian Inst Technol, AENL, NFMTC, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, AENL, NFMTC, Madras 600036, Tamil Nadu, India
机构:
Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USAOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Yoon, Mina
;
Yang, Shenyuan
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机构:
Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA
Chinese Acad Sci, Int Ctr Quantum Struct, Beijing 100080, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R ChinaOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Yang, Shenyuan
;
Hicke, Christian
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Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48823 USAOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Hicke, Christian
;
Wang, Enge
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Chinese Acad Sci, Int Ctr Quantum Struct, Beijing 100080, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R ChinaOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Wang, Enge
;
Geohegan, David
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Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USAOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Geohegan, David
;
Zhang, Zhenyu
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机构:
Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USAOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
机构:
Jadavpur Univ, Thin Film & NanoSci Lab, Dept Phys, Kolkata 700032, W Bengal, IndiaJadavpur Univ, Thin Film & NanoSci Lab, Dept Phys, Kolkata 700032, W Bengal, India
Sen, D.
;
Mitra, M. K.
论文数: 0引用数: 0
h-index: 0
机构:
Jadavpur Univ, Sch Mat Sci & Nanotechnol, Kolkata 700032, W Bengal, IndiaJadavpur Univ, Thin Film & NanoSci Lab, Dept Phys, Kolkata 700032, W Bengal, India
Mitra, M. K.
;
Chattopadhyay, K. K.
论文数: 0引用数: 0
h-index: 0
机构:
Jadavpur Univ, Thin Film & NanoSci Lab, Dept Phys, Kolkata 700032, W Bengal, India
Jadavpur Univ, Sch Mat Sci & Nanotechnol, Kolkata 700032, W Bengal, IndiaJadavpur Univ, Thin Film & NanoSci Lab, Dept Phys, Kolkata 700032, W Bengal, India
机构:
Indian Inst Technol, AENL, NFMTC, Madras 600036, Tamil Nadu, India
Indian Inst Technol, Low Temp Phys Lab, Dept Phys, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, AENL, NFMTC, Madras 600036, Tamil Nadu, India
Vinayan, B. P.
;
Sethupathi, K.
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol, Low Temp Phys Lab, Dept Phys, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, AENL, NFMTC, Madras 600036, Tamil Nadu, India
Sethupathi, K.
;
Ramaprabhu, S.
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol, AENL, NFMTC, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, AENL, NFMTC, Madras 600036, Tamil Nadu, India
机构:
Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USAOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Yoon, Mina
;
Yang, Shenyuan
论文数: 0引用数: 0
h-index: 0
机构:
Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA
Chinese Acad Sci, Int Ctr Quantum Struct, Beijing 100080, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R ChinaOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Yang, Shenyuan
;
Hicke, Christian
论文数: 0引用数: 0
h-index: 0
机构:
Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48823 USAOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Hicke, Christian
;
Wang, Enge
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Int Ctr Quantum Struct, Beijing 100080, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R ChinaOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Wang, Enge
;
Geohegan, David
论文数: 0引用数: 0
h-index: 0
机构:
Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USAOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Geohegan, David
;
Zhang, Zhenyu
论文数: 0引用数: 0
h-index: 0
机构:
Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USAOak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA