Synthesis of single crystal diamond by microwave plasma assisted chemical vapor deposition with in situ low-coherence interferometric control of growth rate

被引：19

作者：

Bushuev, E. V. ^{[1
]}

Yurov, V. Yu. ^{[1
,2
]}

Bolshakov, A. P. ^{[1
,2
]}

Ralchenko, V. G. ^{[1
,2
,3
]}

Ashkinazi, E. E. ^{[1
,2
]}

Ryabova, A. V. ^{[1
,2
]}

Antonova, I. A. ^{[1
,2
]}

Volkov, P. V. ^{[4
]}

Goryunov, A. V. ^{[4
]}

Luk'yanov, A. Yu. ^{[4
]}

机构：

[1] Russian Acad Sci, AM Prokhorov Gen Phys Inst, Vavilov Str 38, Moscow 119991, Russia

[2] Natl Res Nucl Univ MEPhI, Kashirskoe Shosse 31, Moscow 115409, Russia

[3] Harbin Inst Technol, 92 Xidazhi Str, Harbin 150001, Peoples R China

[4] Russian Acad Sci, Inst Phys Microstruct, Acad Skaya Str 7, Afonino 603950, Nizhny Novgorod, Russia

来源：

基金：

俄罗斯科学基金会;

关键词：

SC diamond; Homoepitaxy; Microwave plasma; Low-coherence interferometry; Growth rate; Etching; TEMPERATURE; DETECTOR; FILMS;

D O I：

10.1016/j.diamond.2016.03.023

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We performed synthesis of single crystal (SC) diamond by microwave plasma chemical vapor deposition in methane-enriched H-2-CH4 gas mixtures, and achieved growth rates more than 30 mu m/h, without adding nitrogen in reaction mixture. A low-coherence interferometry (LCI) was employed for precise measurements of the thickness and growth rate of the epitaxial diamond layers in the course of the process. The performance of this in situ technique is demonstrated by continuously monitoring the SC diamond thickness in a single growth run upon variation of CH4 percentage in steps, up to 17%, without switching off the plasma, to produce a "multilayer diamond film. In addition, etching rate of diamond in pure hydrogen plasma has been evaluated with the same method. The LCI technique allows quick collection of growth kinetics data upon systematic variation of a selected process parameter for the growth optimization. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：83 / 89

页数：7

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