Bitter gourd-shaped Ni3V2O8 anode developed by a one-pot metal-organic framework-combustion technique for advanced Li-ion batteries

被引:51
作者
Soundharrajan, Vaiyapuri [1 ]
Sambandam, Balaji [1 ]
Song, Jinju [1 ]
Kim, Sungjin [1 ]
Jo, Jeonggeun [1 ]
Pham, Duong Tung [1 ]
Kim, Seokhun [1 ]
Mathew, Vinod [1 ]
Kim, Jaekook [1 ]
机构
[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Gwangju 500757, South Korea
基金
新加坡国家研究基金会;
关键词
Metal-organic framework-combustion; Nickel vanadate; Morphology; Lithium ion batteries; Long life stability; HIGH-PERFORMANCE ANODE; ELECTROCHEMICAL PERFORMANCE; STORAGE PROPERTIES; VANADIUM-OXIDE; SODIUM; NANOPARTICLES; COMPOSITE; CARBON; NANOSTRUCTURES; MICROSPHERES;
D O I
10.1016/j.ceramint.2017.07.018
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The present study reports on the one-pot synthesis of Ni3V2O8 (NVO) electrodes by a simple metal organic framework-combustion (MOF-C) technique for anode applications in Li-ion batteries (LIBs). The particle morphology of the prepared NVO is observed to vary as irregular rods, porous bitter gourd and hybrid micro/nano particles depending on the concentration of the framework linker used during synthesis. In specific, the orthorhombic phase and the unique bitter gourd-type secondary structure comprised of agglomerated nanoparticles and porous morphologies is confirmed using powder X-ray diffraction, electron microscopies, X-ray photoelectron spectroscopy and N-2 adsorption desorption measurements. When tested for lithium batteries as anode, the bitter gourd-type NVO electrode shows an initial discharge capacity of 1362 mA h g(-1) and a reversible capacity of 822 mA h g(-1) are sustained at a rate of 200 mA g(-1) after 100 cycles. Moreover, at 2000 mA g(-1), a reversible capacity of 724 mA h g(-1) is retained after 500 cycles. Interestingly, the porous bitter gourd-shaped NVO electrode registered significantly high rate performance and reversible specific capacities of 764, 531 and 313 mA h CI at high rates of 1, 5 and 10 A g(-1), respectively.
引用
收藏
页码:13224 / 13232
页数:9
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