Cathodoluminescence and photoinduced current spectroscopy studies of defects in Cd0.8Zn0.2Te

被引：41

作者：

Castaldini, A ^{[1
]}

Cavallini, A ^{[1
]}

Fraboni, B ^{[1
]}

Polenta, L ^{[1
]}

Fernandez, P ^{[1
]}

Piqueras, J ^{[1
]}

机构：

[1] UNIV COMPLUTENSE MADRID,DEPT FIS MAT,E-28040 MADRID,SPAIN

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.54.7622

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deep levels in Cd1-xZnxTe have not yet been fully characterized and understood, even though this material is very promising for medical and optoelectronic applications. We have investigated p-type semi-insulating Cd0.8Zn0.2Te with cathodoluminescence (CL) and photoinduced current transient spectroscopy (PICTS) methods. PICTS analyses allow detection of deep levels which are not revealed by other current spectroscopy techniques generally used, as they permit scanning of a wider region of the energy gap. Five levels have been detected (0.16, 0.25, 0.57, 0.78, and 1.1 eV) and, by combining the results obtained with the above-mentioned CL techniques, we were able to advance hypotheses on the character (donor or acceptor) and origin of some of these levels. The key role prayed by the 0.78-eV level in controlling the carrier transport properties has also been confirmed.

引用

页码：7622 / 7625

页数：4

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