3 W - High brightness tapered diode lasers at 735nm based on tensile strained GaAsP-QWs

被引：10

作者：

Erbert, G ^{[1
]}

Fricke, J ^{[1
]}

Huelsewede, R ^{[1
]}

Knauer, A ^{[1
]}

Pittroff, W ^{[1
]}

Ressel, P ^{[1
]}

Sebastian, J ^{[1
]}

Sumpf, B ^{[1
]}

Wenzel, H ^{[1
]}

Traenkle, G ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS II | 2003年 / 4995卷

关键词：

high power diode lasers; tensile strained quantum wells; beam quality; reliability;

D O I：

10.1117/12.475763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tensile strained GaAsP quantum wells embedded in AlGaAs waveguide structures are used to realize high power, high brightness short wavelength tapered laser diodes. At 735nm these laser diodes show tip to 3W nearly diffraction limited output power with a wall plug efficiency of about 40%. Single spectral mode behavior is observed at output power levels up to 1W. From aging test a high reliability with lifetime exceeding 5000 can be derived comparable to results obtained from broad area laser diodes with the same aperture width. There are only small changes of the beam quality during aging. In conclusion it is shown that well designed tapered laser are a step forward to high efficient, diffraction limited light sources in the Watt-range which can easily fabricated in high volumes.

引用

页码：29 / 38

页数：10

共 27 条

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Wenzel, H
Erbert, G
Bugge, F
Knauer, A
Maege, J
Sebastian, J
Staske, R
Vogel, K
Tränkle, G
IN-PLANE SEMICONDUCTOR LASERS IV, 2000, 3947 : 32 - 38
[2] High-brightness 735 nm tapered diode lasers
Sumpf, B
Hülsewede, R
Erbert, G
Dzionk, C
Fricke, J
Knauer, A
Pittroff, W
Ressel, P
Sebastian, J
Wenzel, H
Tränkle, G
ELECTRONICS LETTERS, 2002, 38 (04) : 183 - 184
[3] Reliable 1-W CW operation of high-brightness tapered diode lasers at 735 nm
Sumpf, B
Beister, G
Erbert, G
Fricke, J
Knauer, A
Ressel, P
Tränkle, G
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (04) : 984 - 986
[4] High brightness 735 nm tapered lasers – optimisation of the laser geometry
B. Sumpf
R. Hülsewede
G. Erbert
C. Dzionk
J. Fricke
A. Knauer
W. Pittroff
P. Ressel
J. Sebastian
G. Tränkle
Optical and Quantum Electronics, 2003, 35 : 521 - 532
[5] High brightness 735 nm tapered lasers -: optimisation of the laser geometry
Sumpf, B
Hülsewede, R
Erbert, G
Dzionk, C
Fricke, J
Knauer, A
Pittroff, W
Ressel, P
Sebastian, J
Tränkle, G
OPTICAL AND QUANTUM ELECTRONICS, 2003, 35 (04) : 521 - 532
[6] 8 W high-efficiency high-brightness tapered diode lasers at 976 nm
Kelemen, MT
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Mikulla, M
Weirnann, G
HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS IV, 2006, 6104
[7] 10 W high-efficiency high-brightness tapered diode lasers at 976 nm
Ostendorf, R.
Kaufel, G.
Moritz, R.
Mikulla, M.
Ambacher, O.
Kelemen, M. T.
Gilly, J.
HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VI, 2008, 6876
[8] High-power 0.81 μm tensile strained GaAsP/InGaP diode lasers
Kim, CH
Um, KY
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Moon, KH
Leem, SJ
Lee, SH
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S293 - S296
[9] High-brightness 635 nm tapered diode lasers with optimized index guiding
Feise, D.
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Dittrich, H.
Kaspari, Chr.
Paschke, K.
Erbert, G.
HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VIII, 2010, 7583
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Knauer, A
Erbert, G
Wenzel, H
Bhattacharya, A
Bugge, F
Maege, J
Pittroff, W
Sebastian, J
ELECTRONICS LETTERS, 1999, 35 (08) : 638 - 639

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