Evaluation of the concentration of point defects in GaN

被引：62

作者：

Reshchikov, M. A. ^{[1
]}

Usikov, A. ^{[2
,3
]}

Helava, H. ^{[2
]}

Makarov, Yu. ^{[2
]}

Prozheeva, V. ^{[4
]}

Makkonen, I. ^{[4
]}

Tuomisto, F. ^{[4
]}

Leach, J. H. ^{[5
]}

Udwary, K. ^{[5
]}

机构：

[1] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA

[2] Nitride Crystals Inc, 181E Ind Ct,Ste B, Deer Pk, NY 11729 USA

[3] St Petersburg Natl Res Univ Informat Technol Mech, 49 Kronverkskiy Ave, St Petersburg 197101, Russia

[4] Aalto Univ, Dept Appl Phys, Aalto 00076, Finland

[5] Kyma Technol Inc, Raleigh, NC 27617 USA

来源：

SCIENTIFIC REPORTS | 2017年 / 7卷

基金：

美国国家科学基金会;

关键词：

TOTAL-ENERGY CALCULATIONS; POSITRON-ANNIHILATION; ELECTRON; SEMICONDUCTORS; TRAPS; ACCEPTORS; DENSITIES;

D O I：

10.1038/s41598-017-08570-1

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion mass spectrometry (SIMS), and deep level transient spectroscopy (DLTS). Defect-related PL intensity in undoped GaN grown by hydride vapor phase epitaxy increases linearly with the concentration of related defects only up to 1016 cm(-3). At higher concentrations, the PL intensity associated with individual defects tends to saturate, and accordingly, does not directly correlate with the concentration of defects. For this reason, SIMS analysis, with relatively high detection limits, may not be helpful for classifying unidentified point defects in GaN. Additionally, we highlight challenges in correlating defects identified by PL with those by PAS and DLTS methods.

引用

页数：11

共 45 条

[1] Theoretical and experimental study of positron annihilation with core electrons in solids [J].

Alatalo, M ;

Barbiellini, B ;

Hakala, M ;

Kauppinen, H ;

Korhonen, T ;

Puska, MJ ;

Saarinen, K ;

Hautojarvi, P ;

Nieminen, RM .

PHYSICAL REVIEW B, 1996, 54 (04) :2397-2409

[2] First-principles theory of nonradiative carrier capture via multiphonon emission [J].

Alkauskas, Audrius ;

Yan, Qimin ;

Van de Walle, Chris G. .

PHYSICAL REVIEW B, 2014, 90 (07)

[3] Electrical characterisation of hole traps in n-type GaN [J].

Auret, FD ;

Meyer, WE ;

Wu, L ;

Hayes, M ;

Legodi, MJ ;

Beaumont, B ;

Gibart, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2004, 201 (10) :2271-2276

[4] IMPROVED TETRAHEDRON METHOD FOR BRILLOUIN-ZONE INTEGRATIONS [J].

BLOCHL, PE ;

JEPSEN, O ;

ANDERSEN, OK .

PHYSICAL REVIEW B, 1994, 49 (23) :16223-16233

[5] Hydrogen-carbon complexes and the blue luminescence band in GaN [J].

Demchenko, D. O. ;

Diallo, I. C. ;

Reshchikov, M. A. .

JOURNAL OF APPLIED PHYSICS, 2016, 119 (03)

[6] Blue luminescence and Zn acceptor in GaN [J].

Demchenko, D. O. ;

Reshchikov, M. A. .

PHYSICAL REVIEW B, 2013, 88 (11)

[7] First-principles calculations for point defects in solids [J].

Freysoldt, Christoph ;

Grabowski, Blazej ;

Hickel, Tilmann ;

Neugebauer, Joerg ;

Kresse, Georg ;

Janotti, Anderson ;

Van de Walle, Chris G. .

REVIEWS OF MODERN PHYSICS, 2014, 86 (01) :253-305

[8] Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set [J].

Kresse, G ;

Furthmuller, J .

PHYSICAL REVIEW B, 1996, 54 (16) :11169-11186

[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[10] Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN [J].

Lee, In-Hwan ;

Polyakov, A. Y. ;

Smirnov, N. B. ;

Yakimov, E. B. ;

Tarelkin, S. A. ;

Turutin, A. V. ;

Shemerov, I. V. ;

Pearton, S. J. .

JOURNAL OF APPLIED PHYSICS, 2016, 119 (20)

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