Graphene-decorated V2O5 nanobelts (GVNBs) were synthesized via a low-temperature hydrothermal method in a single step. V2O5 nanobelts (VNBs) were formed in the presence of graphene oxide, a mild oxidant, which also enhanced the conductivity of GVNBs. From the electron energy loss spectroscopy analysis, the reduced graphene oxide (rGO) are inserted into the layered crystal structure of V2O5 nanobelts, which further confirmed the enhanced conductivity of the nanobelts. The electrochemical energy-storage capacity of GVNBs was investigated for supercapacitor applications. The specific capacitance of GVNBs was evaluated using cyclic voltammetry (CV) and charge/discharge (CD) studies. The GVNBs having V2O5-rich composite, namely, V(3)G(1) (VO/GO = 3:1), showed superior specific capacitance in comparison to the other composites (V(1)G(1) and V(1)G(3)) and the pure materials. Moreover, the V(3)G(1) composite showed excellent cyclic stability and the capacitance retention of about 82% was observed even after 5000 cycles.
机构:
Indian Inst Sci Educ & Res, Ctr Energy Sci, Pune 411008, Maharashtra, India
Indian Inst Sci Educ & Res, Dept Phys, Pune 411008, Maharashtra, IndiaIndian Inst Sci Educ & Res, Ctr Energy Sci, Pune 411008, Maharashtra, India
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Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Rout, Chandra Sekhar
Gautam, Ujjal K.
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Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, JapanPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Gautam, Ujjal K.
Bando, Yoshio
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Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, JapanPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Bando, Yoshio
Rangappa, Dinesh
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Natl Inst Adv Ind Sci & Technol, Energy Technol Res Inst, Tsukuba, Ibaraki 3058568, JapanPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Rangappa, Dinesh
Fang, Xiaosheng
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Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, JapanPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Fang, Xiaosheng
Li, Liang
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Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, JapanPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Li, Liang
Golberg, Dmitri
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Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, JapanPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
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Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Chem Engn, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Grad Sch Sci & Engn, Dept Chem Engn, Meguro Ku, Tokyo 1528552, Japan
Lin, Shan
Shao, Bin
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Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Chem Engn, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Grad Sch Sci & Engn, Dept Chem Engn, Meguro Ku, Tokyo 1528552, Japan
Shao, Bin
Taniguchi, Izumi
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Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Chem Engn, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Grad Sch Sci & Engn, Dept Chem Engn, Meguro Ku, Tokyo 1528552, Japan