Evaluation of minority-carrier diffusion length in n-type β-FeSi2 single crystals by electron-beam-induced current

被引：15

作者：

Ootsuka, Teruhisa ^{[1
]}

Suemasu, Takashi ^{[1
]}

Chen, Jun ^{[2
]}

Sekiguchi, Takashi ^{[2
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Adv Electron Mat Ctr, Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 04期

关键词：

D O I：

10.1063/1.2835904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have evaluated the diffusion length of minority carriers (holes) in single-crystalline n-type beta-FeSi2 bulk grown by chemical vapor transport by means of electron-beam-induced current (EBIC) technique in the edge-scan configuration. The EBIC line-scan data showed a clear exponential dependence of distance from the Al electrode. The diffusion length was estimated to be 20 mu m at room temperature, and increased upon high-temperature annealing, reaching approximately 30 mu m after annealing at 800 degrees C for 8 h. This result explained the improvement of photoresponsivity in the Al/n-beta-FeSi2 Schottky diodes by high-temperature annealing. (c) 2008 American Institute of Physics.

引用

页数：3

共 20 条

[1] OPTICAL-PROPERTIES OF SEMICONDUCTING IRON DISILICIDE THIN-FILMS [J].

BOST, MC ;

MAHAN, JE .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2696-2703

[2] Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current [J].

Chen, J. ;

Sekiguchi, T. ;

Fukata, N. ;

Takase, M. ;

Chikyow, T. ;

Yamabe, K. ;

Hasunuma, R. ;

Akasaka, Y. ;

Inumiya, S. ;

Nara, Y. ;

Yamada, K. .

APPLIED PHYSICS LETTERS, 2006, 89 (22)

[3] Electron-beam-induced current study of grain boundaries in multicrystalline silicon [J].

Chen, J ;

Sekiguchi, T ;

Yang, D ;

Yin, F ;

Kido, K ;

Tsurekawa, S .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) :5490-5495

[4] Time-resolved 1.5 μm-band photoluminescence of highly oriented β-FeSi2 films prepared by magnetron-sputtering deposition [J].

Chu, S ;

Hirohada, T ;

Kuwabara, M ;

Kan, H ;

Hiruma, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (2A) :L127-L129

[5] PENETRATION AND ENERGY-LOSS THEORY OF ELECTRONS IN SOLID TARGETS [J].

KANAYA, K ;

OKAYAMA, S .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) :43-&

[6]

Leamy H.J., 1982, J APPL PHYS, V53, P51

[7] PHOTOELECTRIC STUDY OF BETA-FESI2 ON SILICON - OPTICAL-THRESHOLD AS A FUNCTION OF TEMPERATURE [J].

LEFKI, K ;

MURET, P .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) :1138-1142

[8] A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 mu m [J].

Leong, D ;

Harry, M ;

Reeson, KJ ;

Homewood, KP .

NATURE, 1997, 387 (6634) :686-688

[9] Doping of β-FeSi2 films with boron and arsenic by sputtering and its application for optoelectronic devices [J].

Liu, ZX ;

Osamura, M ;

Ootsuka, T ;

Wang, SN ;

Fukuzawa, Y ;

Suzuki, Y ;

Kuroda, R ;

Mise, T ;

Otogawa, N ;

Nakayama, Y ;

Tanoue, H ;

Makita, Y .

OPTICAL MATERIALS, 2005, 27 (05) :942-947

[10] Photovoltaic properties of ion-beam synthesized β-FeSi2/n-Si heterojunctions [J].

Maeda, Y ;

Umezawa, K ;

Hayashi, Y ;

Miyake, K ;

Ohashi, K .

THIN SOLID FILMS, 2001, 381 (02) :256-261

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