Near-field optical mapping of exciton wave functions in a GaAs quantum dot

被引：136

作者：

Matsuda, K

Saiki, T

Nomura, S

Mihara, M

Aoyagi, Y

Nair, S

Takagahara, T

机构：

[1] Kanagawa Acad Sci & Technol, Kawasaki, Kanagawa, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama, Japan

[3] Keio Univ, Dept Elect & Elect Engn, Kohoku Ku, Kanagawa, Japan

[4] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 305, Japan

[5] Inst Phys & Chem Res, Semicond Lab, Wako, Saitama, Japan

[6] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 227, Japan

[7] Univ Toronto, Ctr Adv Nanotechnol, Toronto, ON M5S 3E3, Canada

[8] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 606, Japan

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.91.177401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Near-field photoluminescence imaging spectroscopy of naturally occurring GaAs quantum dots (QDs) is presented. We successfully mapped out center-of -mass wave functions of an exciton confined in a GaAs QD in real space due to the enhancement of spatial resolution up to 30 nm. As a consequence, we discovered that the spatial profile of the exciton emission, which reflects the shape of a monolayer-high island, differs from that of biexciton emission, due to different distributions of the polarization field for the exciton and biexciton recombinations. This novel technique can be extensively applied to wave function engineering in the design and the fabrication of quantum devices.

引用

页数：4

共 26 条

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