The development of integrated circuits based on two-dimensional materials

被引:228
作者
Zhu, Kaichen [1 ,2 ]
Wen, Chao [3 ]
Aljarb, Areej A. [1 ]
Xue, Fei [1 ]
Xu, Xiangming [1 ]
Tung, Vincent [1 ]
Zhang, Xixiang [1 ]
Alshareef, Husam N.
Lanza, Mario [1 ]
机构
[1] King Abdullah Univ Sci & Technol KAUST, Phys Sci & Engn Div, Thuwal, Saudi Arabia
[2] Univ Barcelona, Dept Elect & Biomed Engn, MIND, Barcelona, Spain
[3] Soochow Univ, Collaborat Innovat Ctr Suzhou Nanosci & Technol, Inst Funct Nano & Soft Mat FUNSOM, Suzhou, Peoples R China
关键词
HEXAGONAL BORON-NITRIDE; CALCIUM-FLUORIDE; GRAPHENE; PERFORMANCE; MONOLAYER; LAYER; MOS2; TECHNOLOGY; TRANSISTOR; GROWTH;
D O I
10.1038/s41928-021-00672-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two-dimensional (2D) materials could potentially be used to develop advanced monolithic integrated circuits. However, despite impressive demonstrations of single devices and simple circuits-in some cases with performance superior to those of silicon-based circuits-reports on the fabrication of integrated circuits using 2D materials are limited and the creation of large-scale circuits remains in its infancy. Here we examine the development of integrated circuits based on 2D layered materials. We assess the most advanced circuits fabricated so far and explore the key challenges that need to be addressed to deliver highly scaled circuits. We also propose a roadmap for the future development of integrated circuits based on 2D layered materials. This Perspective examines the development of integrated circuits based on layered two-dimensional materials, exploring where they are likely to first find commercial use and considers the challenges than need to be addressed to create highly scaled circuits.
引用
收藏
页码:775 / 785
页数:11
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