Demonstration and Evaluation of p-Type and n-Type ZnO Nanoparticles-Based Homojunction UV Light-Emitting Diodes

被引：10

作者：

Shafiqul, Islam Mohammad ^{[1
]}

Deep, Raj ^{[2
]}

Lin, Jie ^{[3
]}

Yoshida, Toshiyuki ^{[2
]}

Fujita, Yasuhisa ^{[2
,3
]}

机构：

[1] Shimane Univ, Interdisciplinary Grad Sch Sci & Engn, 1060 Nishikawatsu, Matsue, Shimane 6908504, Japan

[2] Shimane Univ, Grad Sch Nat Sci & Technol, 1060 Nishikawatsu, Matsue, Shimane 6908504, Japan

[3] S Nanotech Cocreat Co Ltd, R&D Dept, 1060 Nishikawatsu, Matsue, Shimane 6900823, Japan

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2022年 / 16卷 / 05期

关键词：

coating methods; electroluminescence; homojunction; light-emitting diodes; ZnO nanoparticles; THERMAL-TREATMENT; THIN-FILMS; TEMPERATURE; PHOTOLUMINESCENCE; LUMINESCENCE; EMISSION;

D O I：

10.1002/pssr.202100556

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The world's first homojunction UV light-emitting diode (LED) based on both p-type and n-type ZnO nanoparticles (NPs) is demonstrated. Nitrogen-doped ZnO and gallium-doped ZnO NPs are provided to fabricate p-type and n-type NP layers, respectively. The LEDs with the structures of p-ZnO/GZO and p-ZnO/n-ZnO/GZO are fabricated. These devices show near UV electroluminescence (EL) at room temperature and emission power doubled by inserting the n-ZnO NP layer. By comparing the results of I-V, EL and photoluminescence for LEDs, it can be confirmed that the holes inject from p-ZnO NP layer to n-ZnO NP layer and the mechanism of these devices are that of p-n junction LEDs.

引用

页数：6

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