High-density Gate Aperture Arrays for Mo-FEAs Fabricated by Electron Beam Lithography

被引：0

作者：

Yan, Fei ^{[1
]}

Li, Nannan ^{[2
]}

Chen, Lei ^{[1
]}

Jin, Dazhi ^{[1
]}

Xiang, Wei ^{[1
]}

机构：

[1] China Acad Engn Phys, Terahertz Res Ctr, Inst Elect Engn, POB 919-518, Mianyang 621900, Peoples R China

[2] Univ Elect Sci & Technol China, Sch Phys Elect, Natl Key Lab Sci & Technol Vacuum Elect, Chengdu 610054, Peoples R China

来源：

2015 IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC) | 2015年

关键词：

field emitter array; gate aperture; electron beam lithography; MICROWAVE APPLICATIONS; FIELD;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron sources are of great importance for the operation of the microwave devices. High-density field emitter arrays (FEA) can be used as electron sources for microwave devices with frequencies extending into the THz. In this work, we report on the successful application of electron beam lithography for fabricating the high-density gate aperture arrays for Mo-FEAs. We demonstrate gate aperture arrays with sub-micron pitch and density up to 10(8) tips / cm(2). The results can provide useful information for the application of field emitter arrays to special microwave devices.

引用

页数：2

共 4 条

[1] Field-emitter-array development for microwave applications [J].