In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth

被引：13
作者：
Bell, GR [1 ]
Pristovsek, M
Tsukamoto, S
Orr, BG
Arakawa, Y
Koguchi, N
机构：
[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
[2] NIMS, Tsukuba, Ibaraki 3050047, Japan
[3] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany
[4] Univ Tokyo, IIS, NCRC, Meguro Ku, Tokyo 1538505, Japan
[5] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
[6] Univ Tokyo, RCAST, NCRC, Meguro Ku, Tokyo 1538505, Japan
[7] Univ Tokyo, IIS, Meguro Ku, Tokyo 1538505, Japan
来源：
SURFACE SCIENCE | 2003年 / 544卷 / 2-3期
关键词：
indium arsenide; gallium arsenide; scanning tunneling microscopy; epitaxy;
D O I：
10.1016/j.susc.2003.08.021
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Arrays of InAs quantum dots (QDs) have been studied using in situ scanning tunneling microscopy (STM) during their growth by molecular beam epitaxy on GaAs(001). At a substrate temperature of 400 degreesC under As-4 flux, both the QDs and the underlying step-terrace structure of the wetting layer (WL) are found to be static, with neither step-flow nor QD ripening observed. Higher resolution images of the mature WL show slightly different [110] periodicities to those observed in quenched STM studies. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：234 / 240
页数：7
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