Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma

被引：15

作者：

Chatterjee, S ^{[1
]}

Samanta, SK

Banerjee, HD

Maiti, CK

机构：

[1] Indian Inst Technol, Dept Elect & ECE, Kharagpur 721302, W Bengal, India

[2] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 06期

关键词：

D O I：

10.1049/el:20010253

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High dielectric constant (high-k) ZrO2 films have been deposited on strained Si0.91Ge0.09 epitaxial layers using zirconium tetratert butoxide [Zr(OC(CH3)(3))(4)] by microwave plasma enhanced vapour deposition technique at a low temperature. Deposited ZrO2 films show good electrical properties and are suitable for microelectronic applications.

引用

页码：390 / 392

页数：3

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