Positron annihilation characteristics in UO2: for lattice and vacancy defects induced by electron irradiation

被引：25

作者：

Barthe, M. -F. ^{[1
]}

Labrim, H. ^{[1
]}

Gentils, A. ^{[1
]}

Desgardin, P. ^{[1
]}

Corbel, C. ^{[2
]}

Esnouf, S. ^{[2
]}

Piron, J. P. ^{[3
]}

机构：

[1] CNRS, CERI, 3A Rue Ferollerie, F-45071 Orleans 2, France

[2] Ecole Polytech, LSI, F-91128 Palaiseau, France

[3] CEA, DEN, DEC, SESC, F-13108 St Paul Les Durance, France

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 10 | 2007年 / 4卷 / 10期

关键词：

D O I：

10.1002/pssc.200675752

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

In this work, both 22Na based positron lifetime spectroscopy (PALS) and slow positron beam based Doppler annihilation-ray broadening spectrometry (SPBDB) have been used to characterize respectively the bulk and the first micron under the surface of sintered UO2 disks that have been polished and annealed at high temperature (1700 degrees C/24 h/ArH2). Results show the presence of negative ions that are tentatively identified to negatively charged oxygen atoms located in interstitial sites. The positron annihilation characteristics in the UO2 lattice have been determined and are equal to S-L(UO2) = 0.371(5), W-L(UO2) = 0.078(7), tau(L)(UO2) = 169 +/- 1 ps. Such disks have been irradiated at room temperature with electrons and alpha particles at different fluences. After irradiation, SPBDB and PALS measurements show the formation of U-related vacancy defects after a 2.5 MeV electrons irradiation whereas no defects are detected for an irradiation at 1 MeV. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3627 / +

页数：2

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