Oriented silicon nanowires on silicon substrates from oxide-assisted growth and gold catalysts

被引：49
作者：
Yao, Y
Li, FH
Lee, ST
机构：
[1] City Univ Hong Kong, COSDAF, Kowloon, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing, Peoples R China
[4] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing, Peoples R China
来源：
CHEMICAL PHYSICS LETTERS | 2005年 / 406卷 / 4-6期
关键词：
D O I：
10.1016/j.cplett.2005.03.027
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
High-density, oriented silicon nanowires (SiNWs) array were fabricated on (0 0 1) silicon substrates by the oxide-assisted growth method assisted with Au catalyst in a hot filament chemical vapor deposition system. The yield of SiNWs was different with the synthesis temperature. Au particles were present at the tips of the SiNWs and limited the wire diameter. High resolution transmission electron microscopy revealed the epitaxial SiNWs on the Si substrate. (c) 2005 Elsevier B.V. All rights reserved.
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收藏
页码：381 / 385
页数：5
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