Accurate large-signal modeling of SiGeHBTs

被引：0

作者：

Sinnesbichler, FX ^{[1
]}

Olbrich, GR ^{[1
]}

机构：

[1] Infineon Technol AG, Munich, Germany

来源：

2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Accurate large-signal modeling is a prerequisite for any effective nonlinear circuit design. We present a novel large signal model for SiGe HBTs that accurately describes the electrical and thermal accurately behavior or the devices from DC to 40 GHz, covering the entire range of bias conditions. It combines the Gummel-Poon model with elements of the VBIC and the HICUM models as well as with specific extensions for SiGe HBTs. The model, which has been implemented into commercial circuit simulation programs, is validated by the excellent agreement of measured and simulated data of millimeter-wave oscillators.

引用

页码：749 / 752

页数：4

共 14 条

[1]

BRUCE S, 1996, 26 EUR MICR C, P93

[2] SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications [J].