Refractive indices of solid AlGaInAs solutions

被引：12

作者：

Ivanov, A. V. ^{[1
]}

Kurnosov, V. D. ^{[1
]}

Kurnosov, K. V. ^{[1
]}

Marmalyuk, A. A. ^{[1
]}

Romantsevich, V. I. ^{[1
]}

Ryaboshtan, Yu. L. ^{[1
]}

Chernov, R. V. ^{[1
]}

机构：

[1] MF Stelmakh Polyus Res & Dev Inst, Moscow 117342, Russia

来源：

QUANTUM ELECTRONICS | 2007年 / 37卷 / 06期

关键词：

semiconductor laser; refractive index; angular radiation divergence;

D O I：

10.1070/QE2007v037n06ABEH013442

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dispersion relation for refractive indices of solid AlGaInAs solutions is obtained. By using this relation, the theory is shown to be in good agreement with experimental refractive indices and the angular divergence of radiation of semiconductor lasers emitting at 1.3 and 1.55 pm.

引用

页码：545 / 548

页数：4

共 19 条

[1]

Burrell, 1976, SEMICONDUCTOR OPTOEL

[2]

GASEY NC, 1981, HETEROSTRUCTURE LASE, V1

[3] BAND LINEUP AND INPLANE EFFECTIVE-MASS OF INGAASP OR INGAALAS ON INP STRAINED-LAYER QUANTUM-WELL [J].

ISHIKAWA, T ;

BOWERS, JE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :562-570

[4] Well-thickness dependence of high-temperature characteristics in 1.3-μm AlGaInAs-InP strained-multiple-quantum-well lasers [J].

Ishikawa, T ;

Higashi, T ;

Uchida, T ;

Yamamoto, T ;

Fujii, T ;

Shoji, H ;

Kobayashi, M ;

Soda, H .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (12) :1703-1705

[5] NOVEL DESIGN OF ALGAINAS-INP LASERS OPERATING AT 1.3-MU-M [J].

KAZARINOV, RF ;

BELENKY, GL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (03) :423-426

[6] Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures [J].

Li, E. Herbert .

Physica E: Low-Dimensional Systems and Nanostructures, 2000, 5 (04) :215-273

[7] Theory and experiment of In1-xGaxAsyP1-y and In1-x-yGaxAlyAs long-wavelength strained quantum-well lasers [J].

Minch, J ;

Park, SH ;

Keating, T ;

Chuang, SL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (05) :771-782

[8] REFRACTIVE-INDEXES OF (AL, GA, IN)AS EPILAYERS ON INP FOR OPTOELECTRONIC APPLICATIONS [J].

MONDRY, MJ ;

BABIC, DI ;

BOWERS, JE ;

COLDREN, LA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (06) :627-630

[9] COMPOSITIONAL DEPENDENCE OF BAND-GAP ENERGY AND CONDUCTION-BAND EFFECTIVE MASS OF IN1-X-YGAXALY AS LATTICE MATCHED TO INP [J].

OLEGO, D ;

CHANG, TY ;

SILBERG, E ;

CARIDI, EA ;

PINCZUK, A .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :476-478

[10]

Peter Y.Yu., 2002, FUNDAMENTALS SEMICON

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