k dependence of the spin polarization in Mn5Ge3/Ge(111) thin films

被引:3
作者
Ndiaye, W. [1 ]
Mariot, J. -M. [2 ,3 ]
De Padova, P. [4 ]
Richter, M. C. [1 ,5 ]
Wang, W. [1 ,6 ]
Heckmann, O. [1 ,5 ]
Taleb-Ibrahimi, A. [7 ]
Le Fevre, P. [8 ]
Bertran, F. [8 ]
Cacho, C. [9 ]
Leandersson, M. [10 ]
Balasubramanian, T. [10 ]
Stroppa, A. [11 ,12 ]
Picozzi, S. [11 ,12 ]
Hricovini, K. [1 ,5 ]
机构
[1] Univ Cergy Pontoise, Lab Phys Mat & Surfaces, F-95031 Cergy Pontoise, France
[2] Univ Paris 06, Sorbonne Univ, UMR 7614, Lab Chim Phys Mat & Rayonnement, F-75231 Paris 05, France
[3] CNRS, UMR 7614, Lab Chim Phys Mat & Rayonnement, F-75231 Paris 05, France
[4] CNR, Ist Struttura Mat, I-00133 Rome, Italy
[5] CEA Saclay, IRAMIS, DSM, Serv Phys Etat Condense, F-91191 Gif Sur Yvette, France
[6] Tongji Univ, Sch Phys Sci & Engn, Inst Precis Opt Engn, Shanghai 200092, Peoples R China
[7] Synchrotron SOLEIL, CNRS, UR1, F-91192 Gif Sur Yvette, France
[8] Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France
[9] Rutherford Appleton Lab, Cent Laser Facil, Didcot OX11 0QX, Oxon, England
[10] Lund Univ, MAX Lab, S-22100 Lund, Sweden
[11] CNR, Inst Superconducting & Innovat Mat & Devices SPIN, I-67100 Laquila, Italy
[12] Univ Aquila, Dipartimento Fis, I-67010 Coppito, LAquila, Italy
关键词
AUGMENTED-WAVE METHOD; MN5GE3; COMPOUND;
D O I
10.1103/PhysRevB.91.125118
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mn5Ge3(001) thin films grown on Ge(111) were studied by angle-and spin-resolved photoemission using synchrotron radiation in the 17-40 eV photon energy range. The photoelectron spectra were simulated starting from a first-principles band-structure calculation for the ground state, using the free-electron approximation for the final states, taking into account photohole lifetime effects and k(perpendicular to) broadening plus correlation effects, but ignoring transition matrix elements. The measured spin polarizations for the various k points investigated in the Gamma MLA plane of the Brillouin zone are found to be in fair enough agreement with the simulated ones, providing a strong support to the ground-state band-structure calculations. Possible origins for the departures between either simulations and experiments or previous and present experiments are discussed.
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页数:6
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