Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies

被引：9

作者：

Armakavicius, Nerijus ^{[1
]}

Bouhafs, Chamseddine ^{[1
]}

Stanishev, Vallery ^{[1
]}

Kuhne, Philipp ^{[1
]}

Yakimova, Rositsa ^{[2
]}

Knight, Sean ^{[3
]}

Hofmann, Tino ^{[1
,3
,4
]}

Schubert, Mathias ^{[1
,3
]}

Darakchieva, Vanya ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol IFM, Terahertz Mat Anal Ctr, Linkoping, Sweden

[2] Linkoping Univ, Dept Phys Chem & Biol IFM, Semicond Mat, Linkoping, Sweden

[3] Univ Nebraska Lincoln, Dept Elect & Comp Engn, Lincoln, NE USA

[4] Univ North Carolina Charlotte, Dept Phys & Opt Sci, Charlotte, NC USA

来源：

APPLIED SURFACE SCIENCE | 2017年 / 421卷

基金：

瑞典研究理事会; 美国国家科学基金会;

关键词：

THz optical Hall effect; Epitaxial graphene; Free charge carrier properties; ELLIPSOMETRY; GAS;

D O I：

10.1016/j.apsusc.2016.10.023

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 10(12)cm(-2) range and a free hole mobility parameter as high as 1550 cm(2)/Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm(2)/Vs and an order of magnitude higher free electron density in the low 10(13) cm(-2) range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：357 / 360

页数：4

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