Biomolecule nanoparticle-induced nanocomposites with resistive switching nonvolatile memory properties

被引:13
作者
Ko, Yongmin [1 ]
Ryu, Sook Won [2 ]
Cho, Jinhan [1 ]
机构
[1] Korea Univ, Dept Chem & Biol Engn, Seoul 136713, South Korea
[2] Kangwon Natl Univ, Sch Med, Dept Lab Med, Chuncheon Si 200701, Gangwon Do, South Korea
基金
新加坡国家研究基金会;
关键词
Nonvolatile memory; Thermal calcination; Fe2O3; nanocomposite; Electrostatic layer-by-layer assembly; Multilayers; THIN-FILMS; PROTEIN-CAGE; MECHANISM; PARTICLE; ALPHA-FE2O3; DEPOSITION; NANOTUBES; FERRITIN; GROWTH;
D O I
10.1016/j.apsusc.2016.01.225
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Resistive switching behavior-based memory devices are considered promising candidates for next-generation data storage because of their simple structure configuration, low power consumption, and rapid operating speed. Here, the resistive switching nonvolatile memory properties of Fe2O3 nanocomposite (NC) films prepared from the thermal calcination of layer-by-layer (LbL) assembled ferritin multilayers were successfully investigated. For this study, negatively charged ferritin nanoparticles were alternately deposited onto the Pt-coated Si substrate with positively charged poly(allylamine hydrochloride) (PAH) by solution-based electrostatic LbL assembly, and the formed multilayers were thermally calcinated to obtain a homogeneous transition metal oxide NC film through the elimination of organic components, including the protein shell of ferritin. The formed memory device exhibits a stable ON/OFF current ratio of approximately 103, with nanosecond switching times under an applied external bias. In addition, these reversible switching properties were kept stable during the repeated cycling tests of above 200 cycles and a test period of approximately 10(5) s under atmosphere. These solution-based approaches can provide a basis for large-area inorganic nanoparticle-based electric devices through the design of bio-nanomaterials at the molecular level. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:36 / 43
页数:8
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