From radiation induced leakage current to soft breakdown in irradiated MOS devices with ultra-thin gate oxide

被引：0

作者：

Ceschia, M ^{[1
]}

Paccagnella, A ^{[1
]}

Cester, A ^{[1
]}

Ghidini, G ^{[1
]}

Wyss, J ^{[1
]}

机构：

[1] Univ Padua, Dipartimento Elettron & Informat, I-35131 Padua, Italy

来源：

STRUCTURE AND ELECTRONIC PROPERTIES OF ULTRATHIN DIELECTRIC FILMS ON SILICON AND RELATED STRUCTURES | 2000年 / 592卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal Oxide Semiconductor (MOS) capacitors with ultra-thin oxides have been irradiated with ionising particles (8 MeV electrons or Si, Ni, and Ag high energy ions), featuring various Linear Energy Transfer (LET) ranging over 4 orders of magnitude. Different oxide fields (F-bias) were applied during irradiation, ranging between flat-band and 3 MV/cm. We measured the DC Radiation Induced Leakage Current (RILC) at low fields (3-6 MV/cm) after electron or Si ion irradiation. RILC was the highest in devices biased at flat band during irradiation. In devices irradiated with higher LET ions (Ni and Ag) we observed the onset of Soft-Breakdown phenomena. Soft-Breakdown current increases with the oxide field applied during the stress.

引用

页码：201 / 206

页数：6

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