Electrostatic Force-Driven Oxide Heteroepitaxy for Interface Control

被引：36

作者：

Ren, Zhaohui ^{[1
]}

Wu, Mengjiao ^{[1
]}

Chen, Xing ^{[2
]}

Li, Wei ^{[1
]}

Li, Ming ^{[1
]}

Wang, Fang ^{[1
]}

Tian, He ^{[1
,2
]}

Chen, Junze ^{[3
]}

Xie, Yanwu ^{[4
]}

Mai, Jiangquan ^{[5
]}

Li, Xiang ^{[1
]}

Lu, Xinhui ^{[5
]}

Lu, Yunhao ^{[1
]}

Zhang, Hua ^{[3
]}

Van Tendeloo, Gustaaf ^{[6
,7
]}

Zhang, Ze ^{[2
]}

Han, Gaorong ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Sch Mat Sci & Engn, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, Ctr Electron Microscope, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China

[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Block N4-1,50 Nanyang Ave, Singapore 639798, Singapore

[4] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China

[5] Chinese Univ Hong Kong, Dept Phys, Hong Kong 999077, Hong Kong, Peoples R China

[6] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium

[7] Wuhan Univ Technol, Nanostruct Res Ctr, Wuhan 430074, Peoples R China

来源：

ADVANCED MATERIALS | 2018年 / 30卷 / 38期

基金：

中国国家自然科学基金;

关键词：

electrostatic force; ferroelectric polarization screening; interfaces; oxide heterostructures; SINGLE-CRYSTAL; ATOMIC-SCALE; SUPERCONDUCTIVITY; FERROELECTRICITY; ENHANCEMENT; COEXISTENCE; NANORINGS;

D O I：

10.1002/adma.201707017

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the functionalities. Here, it is reported that an electrostatic force, originating from a polar ferroelectric surface, can be used to drive oxide heteroepitaxy, giving rise to an atomically sharp and coherent interface by using a low-temperature solution method. These heterostructures adopt a fascinating selective growth, and show a saturation thickness and the reconstructed interface with concentrated charges accumulation. The ferroelectric polarization screening, developing from a solid-liquid interface to the heterostructure interface, is decisive for the specific growth. At the interface, a charge transfer and accumulation take place for electrical compensation. The facile approach presented here can be extremely useful for controlling oxide heteroepitaxy and producing intriguing interface functionality via electrostatic engineering.

引用

页数：7