Lateral source field-plated β-Ga2O3 MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm2

被引：29

作者：

Lv, Yuanjie ^{[1
]}

Zhou, Xingye ^{[1
]}

Long, Shibing ^{[2
]}

Liang, Shixiong ^{[1
]}

Song, Xubo ^{[1
]}

Zhou, Xuanze ^{[2
]}

Dong, Hang ^{[2
]}

Wang, Yuangang ^{[1
]}

Feng, Zhihong ^{[1
]}

Cai, Shujun ^{[1
]}

机构：

[1] Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang, Hebei, Peoples R China

[2] Univ Sci & Technol China, Sch Microelect, Hefei, Anhui, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Ga2O3; MOSFET; source field plate; breakdown voltage; power figure of merit (PFoM);

D O I：

10.1088/1361-6641/ab4214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, lateral beta-Ga2O3 MOSFETs with source field plate are fabricated on Si-doped homoepitaxial film on (010) Fe-doped semi-insulating beta-Ga2O3 substrate. The drain extension in the source field plate effectively suppresses the peak electric field in the Ga2O3 channel, and improves the breakdown voltage greatly. Moreover, fluorinert FC-770 is used to reduce air breakdown potential during the breakdown testing. The breakdown voltage of the device with L-sd of 28 mu m is measured as high as 2360 V, which is the highest value in reported lateral Ga2O3 MOSFET. Besides, Si-ion implantation is adopted to reduce the ohmic contact resistance (R-c). The value of specific on-resistance (R-on,R-sp) is calculated to be 560 m Omega cm(2), which is a recorded value under such high breakdown voltage, and also lower than the theoretical limit of Si-based power devices under the same breakdown voltage.

引用

页数：4

共 47 条

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