n-type to p-type crossover in quaternary BixSbyPbzSe3 single crystals -: art. no. 103720

被引:32
作者
Kasparová, J
Drasar, C
Krejcová, A
Benes, L
Lost'ák, P
Chen, W
Zhou, ZH
Uher, C
机构
[1] Univ Pardubice, Fac Chem Technol, Pardubice 53210, Czech Republic
[2] Acad Sci Czech Republ, Inst Macromol Chem, Joint Lab Solid State Chem, Pardubice 53210, Czech Republic
[3] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1904158
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the preparation and some physical properties of a quaternary system based on Bi2Se3 codoped with Sb and Pb. Single-crystal samples were prepared using the Bridgman technique and were characterized by measurements of the lattice parameters, electrical resistivity, Hall coefficient, Seebeck coefficient, and thermal conductivity. Atomic emission spectroscopy was used to find the concentration profiles of Sb and Pb along the single-crystal line ingots. Progressive codoping of the Bi2Se3 crystal lattice with Sb and Pb leads to a crossover of the initially n-type conduction to that of the p type. It is assumed that both Sb and Pb enter the Bi sublattice. Physical properties as well as the change in the dominant carrier type are discussed. (c) 2005 American Institute of Physics.
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页数:5
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