Trap levels in RF sputtered CdS thin films

被引：0
|
作者：
Ashour, H [1 ]
El Akkad, F [1 ]
机构：
[1] Kuwait Univ, Dept Phys, Safat 13060, Kuwait
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2001年 / 184卷 / 01期
关键词：
D O I：
10.1002/1521-396X(200103)184:1<175::AID-PSSA175>3.0.CO;2-M
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The trap levels in CdS thin films prepared by rf magnetron sputtering have been investigated using Photoinduced Current Transient Spectroscopy (PICTS). Trap levels in the range 0.08-1.06 eV have been detected. Those levels are tentatively attributed to native defects and foreign impurities (particularly Cu and Ag).
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页码：175 / 178
页数：4
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