Anomalous Nernst effect on a magnetically doped topological insulator surface: A Green's function approach

被引:6
作者
Yang, Yan-Yan [1 ,2 ]
Deng, Ming-Xun [1 ,2 ]
Luo, Wei [3 ]
Ma, R. [4 ]
Zheng, Shi-Han [1 ,2 ]
Wang, Rui-Qiang [1 ,2 ]
机构
[1] South China Normal Univ, ICMP, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China
[2] South China Normal Univ, SPTE, Guangzhou 510006, Guangdong, Peoples R China
[3] Jiangxi Univ Sci & Technol, Sch Sci, Ganzhou 341000, Peoples R China
[4] Nanjing Univ Informat Sci & Technol, Jiangsu Key Lab Optoelect Detect Atmosphere & Oce, Nanjing 210044, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
SINGLE DIRAC CONE; TRANSPORT;
D O I
10.1103/PhysRevB.98.235152
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By generalizing the Kubo-Streda formula for calculating electrical conductivities to the thermoelectric coefficients, we theoretically study the anomalous Nernst effect (ANE) on the surface of a topological insulator induced by a finite concentration of magnetic impurities. The ANE is found to be modulated by the impurity scattering and thermal fluctuations, simultaneously, and so exhibits rich structures in the energy space. While the anomalous Hall conductivity is half-integer quantized with the Fermi level across the magnetic-impurity-induced gap, the anomalous Nernst signal (ANS) is fully suppressed and the thermopower is linear dependent on the Fermi energy. Around the magnetic-impurity-induced localized levels, the ANS and thermopower are resonant enhanced. The suppression and enhancement of the thermoelectric coefficients will compete with each other as the magnetic impurity potential increases continually. More interestingly, when a finite charge potential is included, the resonant peaks of the ANS and thermopower will be renormalized, making the signs of the ANS and thermopower tunable by the strength of the charge potential.
引用
收藏
页数:8
相关论文
共 53 条
[1]   Thermoelectric Signatures of Coherent Transport in Single-Molecule Heterojunctions [J].
Bergfield, J. P. ;
Stafford, C. A. .
NANO LETTERS, 2009, 9 (08) :3072-3076
[2]   Quantum spin Hall effect and topological phase transition in HgTe quantum wells [J].
Bernevig, B. Andrei ;
Hughes, Taylor L. ;
Zhang, Shou-Cheng .
SCIENCE, 2006, 314 (5806) :1757-1761
[3]   Filling of magnetic-impurity-induced gap in topological insulators by potential scattering [J].
Black-Schaffer, A. M. ;
Balatsky, A. V. ;
Fransson, J. .
PHYSICAL REVIEW B, 2015, 91 (20)
[4]   Spin-Seebeck effect on the surface of a topological insulator due to nonequilibrium spin-polarization parallel to the direction of thermally driven electronic transport [J].
Chang, Po-Hao ;
Mahfouzi, Farzad ;
Nagaosa, Naoto ;
Nikolic, Branislav K. .
PHYSICAL REVIEW B, 2014, 89 (19)
[5]   Thermopower and Nernst effect in graphene in a magnetic field [J].
Checkelsky, Joseph G. ;
Ong, N. P. .
PHYSICAL REVIEW B, 2009, 80 (08)
[6]   Simple tuning of carrier type in topological insulator Bi2Se3 by Mn doping [J].
Choi, Y. H. ;
Jo, N. H. ;
Lee, K. J. ;
Lee, H. W. ;
Jo, Y. H. ;
Kajino, J. ;
Takabatake, T. ;
Ko, K. -T. ;
Park, J. -H. ;
Jung, M. H. .
APPLIED PHYSICS LETTERS, 2012, 101 (15)
[7]   Theory of the anomalous Hall effect from the Kubo formula and the Dirac equation -: art. no. 014416 [J].
Crépieux, A ;
Bruno, P .
PHYSICAL REVIEW B, 2001, 64 (01)
[8]   Interband coherence response to electric fields in crystals: Berry-phase contributions and disorder effects [J].
Culcer, Dimitrie ;
Sekine, Akihiko ;
MacDonald, Allan H. .
PHYSICAL REVIEW B, 2017, 96 (03)
[9]   Anomalous Hall response of topological insulators [J].
Culcer, Dimitrie ;
Das Sarma, S. .
PHYSICAL REVIEW B, 2011, 83 (24)
[10]   Competing effects of magnetic impurities in the anomalous Hall effect on the surface of a topological insulator [J].
Deng, Ming-Xun ;
Luo, Wei ;
Deng, W. Y. ;
Chen, M. N. ;
Sheng, L. ;
Xing, D. Y. .
PHYSICAL REVIEW B, 2016, 94 (23)