High-efficiency class E MMIC power amplifiers at 4.0 GHz using AlGaN/GaN HEMT technology

被引：0

作者：

Zomorrodian, Valiallah ^{[1
]}

Pei, Yi ^{[1
]}

Mishra, Umesh K. ^{[1
]}

York, Robert A. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Elect & Comp Eng Dept, Santa Barbara, CA 93106 USA

来源：

2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT) | 2010年

关键词：

GaN; high electron mobility transistor (HEMT); high power; monolithic microwave integrated circuits (MMIC); Class E; power amplifier; large signal model; non-linear; GANHEMTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two high-efficiency Class E MMIC power amplifiers designed at 4 GHz using AlGaN/GaN HEMT technology are presented. The first circuit was designed using a 0.5 mm (4 x 125 mu m) HEMT and when biased at 25 V drain bias it produced 61 % PAE, 33.8 dBm of output power and maximum gain of 14.8 dB. The second circuit used a 1 mm (8 x 125 mu m) HEMT and at 30 V drain bias it produced 57% PAE, 36 dBm of output power, and maximum gain of 13 dB. The key to obtaining the high gain, PAE and output power produced by these circuits is accurate modeling of the HEMTs and the passive components.

引用

页码：513 / 516

页数：4

共 10 条

[1]

Cripps S. C., 2006, ARTECH MICR

[2] Two-stage quasi-class-E power amplifier in GaNHEMT technology [J].

Gao, S ;

Xu, HT ;

Heikman, S ;

Mishra, UK ;

York, RA .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (01) :28-30

[3]

Gao S., 2006, IEEE COMP SEM INT CI

[4] 55% PAE and high power Ka-band GaNHEMTs with linearized transconductance via n+ GaN source contact ledge [J].

Moon, J. S. ;

Wong, D. ;

Hu, M. ;

Hashimoto, P. ;

Antcliffe, M. ;

McGuire, C. ;

Micovic, M. ;

Willadson, P. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (08) :834-837

[5] Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 w/mm at 10 GHz [J].

Pei, Yi ;

Chu, Rongming ;

Fichtenbaum, Nicholas A. ;

Chen, Zhen ;

Brown, David ;

Shen, Likun ;

Keller, Stacia ;

Denbaars, Steven P. ;

Mishra, Umesh K. .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (45-49) :L1087-L1089

[6] IDEALIZED OPERATION OF CLASS-E TUNED POWER-AMPLIFIER [J].

RAAB, FH .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1977, 24 (12) :725-735

[7] 30-W/mm GaNHEMTs by field plate optimization [J].

Wu, YF ;

Saxler, A ;

Moore, M ;

Smith, RP ;

Sheppard, S ;

Chavarkar, PM ;

Wisleder, T ;

Mishra, UK ;

Parikh, P .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (03) :117-119

[8] A high-efficiency class-E GaNHEMT power amplifier at 1.9 GHz [J].

Xu, HT ;

Gao, S ;

Heikman, S ;

Long, SI ;

Mishra, UK ;

York, RA .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (01) :22-24

[9]

Zomorrodian V., 2010, APPL COMPUTATI UNPUB

[10]

Zomorrodian V., 2009, INT S COMP SEM

← 1 →