Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model

被引：6

作者：

Malik, Rasik Rashid ^{[1
]}

Mir, Mehak Ashraf ^{[1
]}

Bhat, Zarak ^{[1
]}

Pampori, Ahtisham ^{[2
]}

Chauhan, Yogesh Singh ^{[2
]}

Ahsan, Sheikh Aamir ^{[1
]}

机构：

[1] Natl Inst Technol Srinagar, Dept Elect & Commun Engn, Nanoelect Res & Dev Lab, Srinagar 190006, Jammu & Kashmir, India

[2] Indian Inst Technol Kanpur, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, India

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2021年 / 9卷 / 09期

关键词：

Logic gates; III-V semiconductor materials; Aluminum nitride; Gallium nitride; Mathematical model; MODFETs; HEMTs; GaN HEMTs; Schrodinger-Poisson; charges; compact model; double-channel; driftdiffusion; capacitance; ALGAN/GAN HEMTS;

D O I：

10.1109/JEDS.2021.3108159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we report the development of a new physics-based analytical model for current and charge characteristics of Double Channel (DC) Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs). The model has at its core the self-consistent calculation of the charge densities, for both upper and lower channels, obtained from a solution of the Schrodinger and Poisson equations. Fermi-Dirac (FD) distribution together with 2D density of states is used for mobile carrier statistics in both the channels. Furthermore, drift-diffusion transport is used to compute the channel current using charge densities at channel extremities. Finally, the model is validated against TCAD simulation and experimental data for a DC-GaN-HEMT. The model, by virtue of its fully physics-based nature, precisely captures the charge screening effect in the lower channel without invoking any empirical clamping functions, unlike prior models, and also possesses the feature of being geometrically scalable.

引用

页码：789 / 797

页数：9

共 29 条

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