Effect of PbO Seeding Layers on the Structure and Properties of the Sol-Gel-Derived BiScO3-PbTiO3 Thin Films

被引：19

作者：

Zhong, Caifu ^{[1
]}

Wang, Xiaohui ^{[1
]}

Wu, Yunyi ^{[1
]}

Li, Longtu ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2010年 / 93卷 / 12期

关键词：

TEMPERATURE; ORIENTATION; THICKNESS;

D O I：

10.1111/j.1551-2916.2010.04180.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Structure and dielectric/piezoelectric properties of the sol-gel-derived 0.36BiScO(3)-0.64PbTiO(3) (BSPT) thin films deposited on Pt(111)/Ti/SiO2/Si(100) substrates with PbO seeding layers are investigated. Highly (100)-oriented BSPT thin films with thickness ranging from 250 to 950 nm were synthesized by alternatively coating PbO seeding layers and BSPT layers. The as-deposited BSPT film with thickness of 950 nm showed high dielectric constant of 1850 and effective piezoelectric coefficient d(33)* of approximate 150 pm/V, the latter was comparable with that of the (001) epitaxial BSPT films grown on Nb-SrTiO3 single crystal substrates. The influence of PbO seeds on the structure and electric properties of the films is discussed as well.

引用

页码：3993 / 3996

页数：4

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