Low-threshold external-cavity quantum cascade laser around 7.2 μm
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作者:
Zhao, Zhibin
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Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R China
Zhao, Zhibin
[1
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Wang, Lijun
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Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R China
Wang, Lijun
[1
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Jia, Zhiwei
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Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R China
Jia, Zhiwei
[1
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Zhang, Jinchuan
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Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R China
Zhang, Jinchuan
[1
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Liu, Fengqi
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Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R China
Liu, Fengqi
[1
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Zhuo, Ning
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Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R China
Zhuo, Ning
[1
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Zhai, Shenqiang
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Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R China
Zhai, Shenqiang
[1
]
Liu, Junqi
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Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R China
Liu, Junqi
[1
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Wang, Zhanguo
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Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R China
Wang, Zhanguo
[1
]
机构:
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, A35,Qinghua East Rd, Beijing 100083, Peoples R China
Room-temperature continuous wave (CW) operation of a tunable external-cavity quantum cascade laser (EC-QCL) at center wavelength around 7.2 mu m is presented. The EC-QCL was implemented in a Littrow configuration. The gain chip is based on a diagonal bound-to-continuum design with a high-reflection coating on the back facet. A two-layer antireflection (AR) coating consisting of Al2O3 and ZnSe was designed and deposited on the front facet of the chip to suppress the Fabry-Perot modes. With this AR coating, single-mode tuning range of 128 cm(-1) was achieved, from 1346.7 to 1475.3 cm(-1) (6.78 to 7.43 mu m). High side-mode suppression ratio over 30 dB was achieved near the center gain region. A very low-threshold current density of 0.89 kA/cm(2) and a high output power of 50 mW were obtained when the EC-QCL was operated in CW mode at 20 degrees C. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)