Influence of oxygen on photoluminescence of erbium-implanted silicon

被引：0
作者：
Song, H
Li, JS
Li, Y
Jiang, H
Liu, XY
Jin, YX
机构：
来源：
CHINESE SCIENCE BULLETIN | 1996年 / 41卷 / 02期
关键词：
implantation; erbium; photoluminescence; oxygen-defect complex center;
D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
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页码：105 / 109
页数：5
相关论文
共 5 条
  • [1] OPTICAL ACTIVATION AND EXCITATION MECHANISMS OF ER IMPLANTED IN SI
    COFFA, S
    PRIOLO, F
    FRANZO, G
    BELLANI, V
    CARNERA, A
    SPINELLA, C
    [J]. PHYSICAL REVIEW B, 1993, 48 (16): : 11782 - 11788
  • [2] OPTICAL ACTIVATION OF ER-3+ IMPLANTED IN SILICON BY OXYGEN IMPURITIES
    FAVENNEC, PN
    LHARIDON, H
    MOUTONNET, D
    SALVI, M
    GAUNEAU, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (04): : L524 - L526
  • [3] IMPURITY ENHANCEMENT OF THE 1.54-MU-M ER3+ LUMINESCENCE IN SILICON
    MICHEL, J
    BENTON, JL
    FERRANTE, RF
    JACOBSON, DC
    EAGLESHAM, DJ
    FITZGERALD, EA
    XIE, YH
    POATE, JM
    KIMERLING, LC
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) : 2672 - 2678
  • [4] OEHRLEIN GS, 1983, DEFECTS SEMICONDUCTO, V2, P107
  • [5] STEGAN SR, 1991, PHYS REV LETT, V66, P2782
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