Reliability of GaAs pin switches for high frequency and high power applications

被引：0

作者：

Yang, XX ^{[1
]}

Ersland, P ^{[1
]}

Hoag, D ^{[1
]}

机构：

[1] Tyco Elect MA COM, Lowell, MA 01851 USA

来源：

2004 ROCS Workshop - Reliability of Compound Semiconductors, Proceedings | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

M/A-COM's monolithic GaAs PIN diode integrated circuit process has been used in high frequency switching applications for many years. A recent application of this process identified a unique failure mode related to operation at high RF power and low frequency. Under these high power conditions, switch insertion loss was seen to increase, particularly at lower frequencies (below 10 GHz). In an effort to better understand this failure mode, a series of reliability experiments were performed. Subsequent changes to this process were also subjected to process reliability tests.

引用

页码：135 / 149

页数：15

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