BeCdSe as a ternary alloy for blue-green optoelectronic applications

被引：24

作者：

Ivanov, SV ^{[1
]}

Nekrutkina, OV

Sorokin, SV

Kaygorodov, VA

Shubina, TV

Toropov, AA

Kop'ev, PS

Reuscher, G

Wagner, V

Geurts, J

Waag, A

Landwehr, G

机构：

[1] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

[3] St Petersburg Electrotech Univ, St Petersburg 197376, Russia

[4] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

[5] Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.1342202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bulk BeCdSe layer lattice-matched to a GaAs substrate, as well as a BeCdSe/ZnSe quantum well (QW) structure have been grown using the submonolayer digital alloying mode of molecular beam epitaxy. The structures have demonstrated bright photoluminescence up to room temperature and good structural quality. Stimulated emission under optical pumping has been obtained for a 2 nm BeCdSe/ZnSe multiple QW structure at 80 K. The bowing parameter of the energy gap of this ternary alloy has been estimated as about 4.5 eV. (C) 2001 American Institute of Physics.

引用

页码：404 / 406

页数：3

共 15 条

[1] Influence of p-type doping on the degradation of ZnSe laser diodes [J].

Albert, D ;

Nürnberger, J ;

Hock, V ;

Ehinger, M ;

Faschinger, W ;

Landwehr, G .

APPLIED PHYSICS LETTERS, 1999, 74 (14) :1957-1959

[2] EXCITON LOCALIZATION IN SUBMONOLAYER INAS/GAAS MULTIPLE QUANTUM-WELLS [J].

CINGOLANI, R ;

BRANDT, O ;

TAPFER, L ;

SCAMARCIO, G ;

LAROCCA, GC ;

PLOOG, K .

PHYSICAL REVIEW B, 1990, 42 (05) :3209-3212

[3] Reduction of the extended defect density in molecular beam epitaxy grown ZnSe based II-VI heterostructures by the use of a BeTe buffer layer [J].

Fischer, F ;

Keller, M ;

Gerhard, T ;

Behr, T ;

Litz, T ;

Lugauer, HJ ;

Keim, M ;

Reuscher, G ;

Baron, T ;

Waag, A ;

Landwehr, G .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) :1650-1654

[4]

Ivanov SV, 2000, PHYS STATUS SOLIDI A, V180, P275, DOI 10.1002/1521-396X(200007)180:1<275::AID-PSSA275>3.0.CO

[5]

2-J

[6] MBE growth and properties of bulk BeCdSe alloys and digital (BeSe:CdSe)/ZnSe quantum wells [J].

Ivanov, SV ;

Toropov, AA ;

Shubina, TV ;

Lebedev, AV ;

Sorokin, SV ;

Sitnikova, AA ;

Kop'ev, PS ;

Reuscher, G ;

Keim, M ;

Bensing, F ;

Waag, A ;

Landwehr, G ;

Pozina, G ;

Bergman, JP ;

Monemar, B .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :109-114

[7] Significant progress in II-VI blue-green laser diode lifetime [J].

Kato, E ;

Noguchi, H ;

Nagai, M ;

Okuyama, H ;

Kijima, S ;

Ishibashi, A .

ELECTRONICS LETTERS, 1998, 34 (03) :282-284

[8] Room-temperature continuous-wave operation of blue-green CdZnSSe/ZnSSe quantum well laser diodes [J].

Law, KK ;

Baude, PF ;

Miller, TJ ;

Haase, MA ;

Haugen, GM ;

Smekalin, K .

ELECTRONICS LETTERS, 1996, 32 (04) :345-346

[9] EXCITONIC AND RAMAN PROPERTIES OF ZNSE/ZN1-XCDXSE STRAINED-LAYER QUANTUM-WELLS [J].

LOZYKOWSKI, HJ ;

SHASTRI, VK .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :3235-3242

[10] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

← 1 2 →