High-performance photodetectors based on bandgap engineered novel layer GaSe0.5Te0.5 nanoflakes

被引：21

作者：

Zhong, Xuying ^{[1
]}

Zhou, Weichang ^{[1
]}

Zhou, Yong ^{[1
]}

Zhou, Fang ^{[1
]}

Liu, Chang ^{[1
]}

Yin, Yanling ^{[1
]}

Peng, Yuehua ^{[1
]}

Tang, Dongsheng ^{[1
]}

机构：

[1] Hunan Normal Univ, Coll Phys & Informat Sci, Synerget Innovat Ctr Quantum Effects & Applicat,M, Key Lab Low Dimens Quantum Structures & Quantum C, Changsha 410081, Hunan, Peoples R China

来源：

RSC ADVANCES | 2016年 / 6卷 / 65期

基金：

高等学校博士学科点专项科研基金;

关键词：

GATE; PHOTOLUMINESCENCE; GASE; NANOSHEETS; GRAPHENE;

D O I：

10.1039/c6ra09239j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Layered two-dimensional (2D) gallium monochalcogenide (GaX, X = S, Se, Te) semiconductor crystals hold great promise for potential electronics and photonics application. In this paper, we reported the optoelectronic properties of 2D bandgap engineered GaSe0.5Te0.5 nanoflakes. The GaSe0.5Te0.5 nanoflakes were synthesized by chemical vapor deposition (CVD) and characterized by XRD, SEM, TEM, XPS, Raman and PL spectra, which demonstrate the high crystal quality of as-prepared nanoflakes. The photodetector based on single GaSe0.5Te0.5 nanoflake shows fast response time, high reversibility and stability both in air and vacuum. The photo-responsivity is up to 22 A W-1 under illumination of 532 nm light. More interesting, the GaSe0.5Te0.5 nanoflake photodetector demonstrate extended light response range, as compared with pure GaSe. The photo-responsivity is 13 A W-1 for 650 nm red light. The present results suggest strongly that the bandgap engineered 2D GaSe0.5Te0.5 nanoflakes hold extensive applications in next-generation photodetection and photosensing nanodevices.

引用

页码：60862 / 60868

页数：7

共 39 条

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