The use of neutron diffraction in the quantitative characterization of dopant-dependent dynamical properties of semiconductors

被引：0

作者：

Martin y Marero, D. ^{[1
,4
]}

Corregidor, V. ^{[2
]}

Fiederle, M. ^{[3
]}

Dieguez, E. ^{[2
]}

机构：

[1] Inst Laue Langevin, F-38042 Grenoble, France

[2] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain

[3] Univ Freiburg, Kristallgraph Inst, D-79104 Freiburg, Germany

[4] CSIC, Inst Ciencia Mat Aragon, Zaragoza, Spain

来源：

PHYSICA B-CONDENSED MATTER | 2004年 / 350卷 / 1-3期

关键词：

Semiconductors; Debye temperature; Neutron diffraction;

D O I：

10.1016/j.physb.2004.03.149

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Single-crystal neutron-diffraction studies of Cd0.96Zn0.04Te, undoped (p and n) and doped CdTe (Cl and V), were performed using the high-resolution time-of-flight diffractometer OSIRIS. The d-spacing and integrated intensity of the (1 1 1) Bragg reflection were determined as a function of temperature. The results were analysed within the Debye approximation and the Debye temperatures calculated. Distinctive features are found according to the conductivity character of the sample and dopant used. This work confirms the reliability of neutron diffraction to obtain unique quantitative vibrational information. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：E549 / E552

页数：4

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