Growth and characterization of GaN grown on moth-eye patterned sapphire substrates

被引：4

作者：

Ishihara, Akihiro ^{[1
]}

Kawai, Ryousuke ^{[1
]}

Kitano, Thukasa ^{[2
]}

Suzuki, Atushi ^{[2
]}

Kondo, Toshiyuki ^{[2
]}

Iwaya, Motoaki ^{[1
]}

Amano, Hiroshi ^{[1
]}

Kamiyama, Satoshi ^{[1
,2
]}

Akasaki, Isamu ^{[1
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Tempaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ Akasaki Commemorative, EL SEED Corp, Nagoya, Aichi 4648601, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

基金：

日本科学技术振兴机构;

关键词：

GaN; MOVPE; interface formation; photoluminescence; LEDs;

D O I：

10.1002/pssc.200983505

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

To realize high-efficiency light-emitting diodes (LEDs), it is necessary to increase light extraction efficiency. Therefore, the introduction of a moth-eye structure, which consists of periodic cones with a pitch of optical wavelength magnitude, into a sapphire surface before the epitaxial growth of nitride films is very promising for reducing the reflectivity of light resulting in high light extraction efficiency. 450 nm GaInN/GaN LEDs were fabricated on conventional and moth-eye substrates by metal organic vapor phase epitaxy (MOVPE). The intensety of room-temperature photoluminescence emitted from the LED with the moth-eye-patterned sapphire substrate was 1.6 times higher than that emitted from the LED without the moth-eye substrate. Under a current injection of 50 mA, the output power of the moth-eye LED is 3.6 times higher than that of the conventional LED. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

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