Synthesis, structural and electrical properties of SiC nanowires via a simple CVD method

被引:9
作者
Gu, Xiuquan [1 ]
Qiang, Yinghuai [1 ]
Zhao, Yulong [1 ]
机构
[1] China Univ Min & Technol, Sch Mat Sci & Engn, Xuzhou 221116, Peoples R China
关键词
CARBON NANOTUBES; HETEROSTRUCTURES; SILICON;
D O I
10.1007/s10854-011-0543-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The beta-SiC nanowires (NWs) prepared by a simple carbon template method exhibit two kinds of electrical transport properties, depending on their crystalline structures. A part of the NWs exhibit the resistivities as low as 1.5 x 10(-5) to 3 x 0(-4) Omega cm due to n-type doping from the intrinsic planar defects and stacking faults, forming Ohmic contact with Au electrodes; the other ones show a typical characteristic of the semiconductor with a remarkable increase in resistivity by 5-7 magnitude orders, owing to a nearly perfect single-crystalline structure with few intrinsic defects. Additionally, the electrical breakdown behavior is observed in the metallic NWs.
引用
收藏
页码:1037 / 1040
页数:4
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