Simulation methodology for dose effects in lateral DMOS transistors

被引：7

作者：

Fernandez-Martinez, P. ^{[1
]}

Palomo, F. R. ^{[2
]}

Diez, S. ^{[3
]}

Hidalgo, S. ^{[1
]}

Ullan, M. ^{[1
]}

Flores, D. ^{[1
]}

Sorge, R. ^{[4
]}

机构：

[1] CSIC, CNM, IMB, Barcelona 08193, Spain

[2] Univ Seville, Sch Engn, Dept Elect Engn, Seville 41092, Spain

[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[4] Innovat High Performance Microelect IHP, D-15236 Frankfurt, Oder, Germany

来源：

MICROELECTRONICS JOURNAL | 2012年 / 43卷 / 01期

关键词：

Total ionising dose (TID); Power LDMOS transistors; TCAD simulation; High energy physics (HEP) experiments; Radiation effects; X-RAY; MOS DEVICES; OXIDES; DAMAGE; CO-60; IRRADIATIONS; DISPLACEMENT;

D O I：

10.1016/j.mejo.2011.10.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Due to the increasing interest on laterally diffused MOS (LDMOS) transistors as a part of power electronics in the high energy physics (HEP) experiments, the effect of total ionising dose (TID) on their electrical performances has been experimentally measured. The analysis of the experimental results requires the aid of physics-based simulations to study the impact of TID effects on the LDMOS drift oxide layer. In this work, a simulation methodology is developed in order to analyse the changes in the electric field distribution as a consequence of the TID induced trapped charge, and its relationship with the technological parameters and the bias conditions. The simulation results are compared with the experimental data. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：50 / 56

页数：7

共 27 条

[1] Total-ionizing-dose effects in modern CMOS technologies
Barnaby, H. J.
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) : 3103 - 3121
[2] Bastran R., 1996, J LUMIN, V68, P225
[3] THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES
BENEDETTO, JM
BOESCH, HE
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1318 - 1323
[4] CHARGE BUILDUP AT HIGH-DOSE AND LOW FIELDS IN SIMOX BURIED OXIDES
BOESCH, HE
BROWN, GA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) : 1234 - 1239
[5] BRAUNIG D, 1994, RADIAT PHYS CHEM, V43, P105
[6] Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor
Brisset, C
FerletCavrois, V
Flament, O
Musseau, O
Leray, JL
Pelloie, JL
Escoffier, R
Michez, A
Cirba, C
Bordure, G
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (06) : 2651 - 2658
[7] Radiation Studies of Power LDMOS Devices for High Energy Physics Applications
Diez, Sergio
Ullan, Miguel
Pellegrini, Giulio
Lozano, Manuel
Sorge, Roland
Knoll, Dieter
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (06) : 3322 - 3328
[8] AN EVALUATION OF LOW-ENERGY X-RAY AND CO-60 IRRADIATIONS OF MOS-TRANSISTORS
DOZIER, CM
FLEETWOOD, DM
BROWN, DB
WINOKUR, PS
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1535 - 1539
[9] TID and Displacement Damage Effects in Vertical and Lateral Power MOSFETs for Integrated DC-DC Converters
Faccio, Federico
Allongue, B.
Blanchot, G.
Fuentes, C.
Michelis, S.
Orlandi, S.
Sorge, R.
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (04) : 1790 - 1797
[10] Physics potential and experimental challenges of the LHC luminosity upgrade
Gianotti, F
Mangano, ML
Virdee, T
Abdullin, S
Azuelos, G
Ball, A
Barberis, D
Belyaev, A
Bloch, P
Bosman, M
Casagrande, L
Cavalli, D
Chumney, P
Cittolin, S
Dasu, S
De Roeck, A
Ellis, N
Farthouat, P
Fournier, D
Hansen, JB
Hinchliffe, I
Hohlfeld, M
Huhtinen, M
Jakobs, K
Joram, C
Mazzucato, F
Mikenberg, G
Miagkov, A
Moretti, M
Moretti, S
Niinikoski, T
Nikitenko, A
Nisati, A
Paige, F
Palestini, S
Papadopoulos, CG
Piccinini, F
Pittau, R
Polesello, G
Richter-Was, E
Sharp, P
Slabospitsky, SR
Smith, WH
Stapnes, S
Tonelli, G
Tsesmelis, E
Usubov, Z
Vacavant, L
van der Bij, J
Watson, A
[J]. EUROPEAN PHYSICAL JOURNAL C, 2005, 39 (03): : 293 - 333

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