Heavy Dirac fermions in a graphene/topological insulator hetero-junction

被引:19
作者
Cao, Wendong [1 ]
Zhang, Rui-Xing [2 ]
Tang, Peizhe [3 ]
Yang, Gang [2 ]
Sofo, Jorge [2 ]
Duan, Wenhui [1 ,4 ,5 ]
Liu, Chao-Xing [2 ]
机构
[1] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[2] Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA
[3] Stanford Univ, Dept Phys, McCullough Bldg, Stanford, CA 94305 USA
[4] Tsinghua Univ, Inst Adv Study, Beijing 100084, Peoples R China
[5] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
graphene; topological insulators; quantum anomalous Hall effect; TOPOLOGICAL-INSULATOR; REALIZATION; GAP;
D O I
10.1088/2053-1583/3/3/034006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The low energy physics of both graphene and surface states of three-dimensional topological insulators (TIs) is described by gapless Dirac fermions with linear dispersion. In this work, we predict the emergence of a 'heavy' Dirac fermion in a graphene/TI hetero-junction, where the linear term almost vanishes and the corresponding energy dispersion becomes highly nonlinear. By combining ab initio calculations and an effective low-energy model, we show explicitly how strong hybridization between Dirac fermions in graphene and the surface states of TIs can reduce the Fermi velocity of Dirac fermions. Due to the negligible linear term, interaction effects will be greatly enhanced and can drive 'heavy' Dirac fermion states into the half quantum Hall state with non-zero Hall conductance.
引用
收藏
页数:13
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共 33 条
[1]   Graphene: Electronic and Photonic Properties and Devices [J].
Avouris, Phaedon .
NANO LETTERS, 2010, 10 (11) :4285-4294
[2]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[3]   The electronic properties of graphene [J].
Castro Neto, A. H. ;
Guinea, F. ;
Peres, N. M. R. ;
Novoselov, K. S. ;
Geim, A. K. .
REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162
[4]   Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].
Chen, Y. L. ;
Analytis, J. G. ;
Chu, J. -H. ;
Liu, Z. K. ;
Mo, S. -K. ;
Qi, X. L. ;
Zhang, H. J. ;
Lu, D. H. ;
Dai, X. ;
Fang, Z. ;
Zhang, S. C. ;
Fisher, I. R. ;
Hussain, Z. ;
Shen, Z. -X. .
SCIENCE, 2009, 325 (5937) :178-181
[5]   Electronic transport in two-dimensional graphene [J].
Das Sarma, S. ;
Adam, Shaffique ;
Hwang, E. H. ;
Rossi, Enrico .
REVIEWS OF MODERN PHYSICS, 2011, 83 (02) :407-470
[6]   Magnetoelectric Polarizability and Axion Electrodynamics in Crystalline Insulators [J].
Essin, Andrew M. ;
Moore, Joel E. ;
Vanderbilt, David .
PHYSICAL REVIEW LETTERS, 2009, 102 (14)
[7]   Semiempirical GGA-type density functional constructed with a long-range dispersion correction [J].
Grimme, Stefan .
JOURNAL OF COMPUTATIONAL CHEMISTRY, 2006, 27 (15) :1787-1799
[9]   Colloquium: Topological insulators [J].
Hasan, M. Z. ;
Kane, C. L. .
REVIEWS OF MODERN PHYSICS, 2010, 82 (04) :3045-3067
[10]   Electron fractionalization in two-dimensional graphenelike structures [J].
Hou, Chang-Yu ;
Chamon, Claudio ;
Mudry, Christopher .
PHYSICAL REVIEW LETTERS, 2007, 98 (18)