SiO2 insulation layer fabricated using RF magnetron facing target sputtering and conventional RF magnetron sputtering

被引：4

作者：

Morohashi, S ^{[1
]}

Matsuo, A ^{[1
]}

Hara, T ^{[1
]}

Tsujimura, S ^{[1
]}

Kawanishi, M ^{[1
]}

机构：

[1] Yamaguchi Univ, Fac Engn, Dept Adv Mat Sci & Engn, Ube, Yamaguchi 7558681, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 08期

关键词：

SiO2 insulation layer; facing target sputtering; Josephson junction;

D O I：

10.1143/JJAP.40.4876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the deposition conditions for a SiO2 insulation layer, such as the substrate-target length, Ar pressure and applied RF power density. using both RF magnetron facing target sputtering and the conventional RF sputtering techniques. We have fabricated an SiO2 layer having with a good surface smoothness under the high deposition rate condition using the RF magnetron facing target sputtering technique.

引用

页码：4876 / 4877

页数：2

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