Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration

被引:128
作者
Chen, Chang-Hsiao [1 ,2 ]
Wu, Chun-Lan [1 ]
Pu, Jiang [3 ]
Chiu, Ming-Hui [4 ]
Kumar, Pushpendra [1 ]
Takenobu, Taishi [3 ]
Li, Lain-Jong [4 ]
机构
[1] Acad Sinica, Inst Atom & Mol Sci, Taipei 11529, Taiwan
[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan
[3] Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
[4] King Abdullah Univ Sci & Technol, Phys Sci & Engn, Thuwal 239556900, Saudi Arabia
关键词
WSe2; transition metal dichalcogenide; doping; THIN-FILM TRANSISTORS; MOS2; GRAPHENE; PHOTOLUMINESCENCE; DICHALCOGENIDES; MOLYBDENUM;
D O I
10.1088/2053-1583/1/3/034001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tungsten diselenide (WSe2) is an attractive transition metal dichalcogenide material, since its Fermi energy close to the mid gap makes it an excellent candidate for realizing p-n junction devices and complementary digital logic applications. Doping is one of the most important technologies for controlling the Fermi energy in semiconductors, including 2D materials. Here we present a simple, stable and controllable p-doping technique on a WSe2 monolayer, where a more p-typed WSe2 field effect transistor is realized by electron transfer from the WSe2 to the gold (Au) decorated on the WSe2 surfaces. Related changes in Raman spectroscopy are also reported. The p-doping caused by Au on WSe2 monolayers lowers the channel resistance by orders of magnitude. The effective hole mobility is similar to 100 (cm(2)/Vs) and the near ideal subthreshold swing of similar to 60mV/decade and high on/off current ratio of >10(6) are observed. The Au deposited on the WSe2 also serves as a protection layer to prevent a reaction between the WSe2 and the environment, making the doping stable and promising for future scalable fabrication.
引用
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页数:11
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