Photoluminescence properties of surface-oxidized Ge nanocrystals: Surface localization of excitons

被引:99
作者
Okamoto, S [1 ]
Kanemitsu, Y [1 ]
机构
[1] UNIV TSUKUBA,INST PHYS,TSUKUBA,IBARAKI 305,JAPAN
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 23期
关键词
D O I
10.1103/PhysRevB.54.16421
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied photoluminescence (PL) properties of surface-oxidized Ge nanocrystals with a 3.7 nm diameter. A difference between the absorption and PL excitation spectra and time-resolved PL measurements show that the site for the radiative recombination of excitons is different from that for the photogeneration of excitons. From fine structures in resonantly excited PL spectra at low temperatures, we concluded that excitons are localized on the surface of Ge nanocrystals and that the strong coupling of excitons with local vibrations of germanium oxides at the surface cause these fine structures.
引用
收藏
页码:16421 / 16424
页数:4
相关论文
共 25 条
[1]  
ASPENS DE, 1975, PHYS REV B, V12, P2297
[2]   LUMINESCENCE PROPERTIES OF CDSE QUANTUM CRYSTALLITES - RESONANCE BETWEEN INTERIOR AND SURFACE LOCALIZED STATES [J].
BAWENDI, MG ;
CARROLL, PJ ;
WILSON, WL ;
BRUS, LE .
JOURNAL OF CHEMICAL PHYSICS, 1992, 96 (02) :946-954
[3]   INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS [J].
BENISTY, H ;
SOTOMAYORTORRES, CM ;
WEISBUCH, C .
PHYSICAL REVIEW B, 1991, 44 (19) :10945-10948
[4]   QUANTUM CRYSTALLITES AND NONLINEAR OPTICS [J].
BRUS, L .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (06) :465-474
[5]   ELECTRONIC SPECTROSCOPY AND PHOTOPHYSICS OF SI NANOCRYSTALS - RELATIONSHIP TO BULK C-SI AND POROUS SI [J].
BRUS, LE ;
SZAJOWSKI, PF ;
WILSON, WL ;
HARRIS, TD ;
SCHUPPLER, S ;
CITRIN, PH .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1995, 117 (10) :2915-2922
[6]   IDENTIFICATION OF RADIATIVE TRANSITIONS IN HIGHLY POROUS SILICON [J].
CALCOTT, PDJ ;
NASH, KJ ;
CANHAM, LT ;
KANE, MJ ;
BRUMHEAD, D .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (07) :L91-L98
[7]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[8]   PHOTOLUMINESCENCE FROM POROUS SILICON BY INFRARED MULTIPHOTON EXCITATION [J].
CHIN, RP ;
SHEN, YR ;
PETROVAKOCH, V .
SCIENCE, 1995, 270 (5237) :776-778
[9]   LIGHT FROM POROUS SILICON BY MULTIPHOTON VIBRONIC EXCITATION [J].
DIENER, J ;
BENCHORIN, M ;
KOVALEV, DI ;
GANICHEV, SD ;
KOCH, F .
PHYSICAL REVIEW B, 1995, 52 (12) :R8617-R8620
[10]   GERMANIUM QUANTUM DOTS - OPTICAL-PROPERTIES AND SYNTHESIS [J].
HEATH, JR ;
SHIANG, JJ ;
ALIVISATOS, AP .
JOURNAL OF CHEMICAL PHYSICS, 1994, 101 (02) :1607-1615