Novel methods of TXRF analysis for silicon wafer surface inspection

被引：25

作者：

Fabry, L

Pahlke, S

Kotz, L

Wobrauschek, P

Streli, C

机构：

[1] Wacker Siltron AG, D-84479 Burghausen, Germany

[2] Atominst Wien, A-1020 Vienna, Austria

来源：

FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1999年 / 363卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1007/s002160051145

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

TXRF became a standard, on-line inspection cool fur controlling the cleanliness of polished Si wafers for semiconductor use. Wafer makers strive for an all-over metallic cleanliness of < 10(10) atoms . cm(-2). The all-over cleanliness can be analyzed using VPD/TXRE For VPD preparation and scanning we have developed an automatic system coupled with TXRF. With synchrotron radiation TXRF we were able to detect 13 fg of Ni in a residual microdroplet, i.e.10(5) atoms . cm(-2).

引用

页码：98 / 102

页数：5

共 15 条

[1] Experimental design .2. Optimization [J].