Graphene-based nonvolatile terahertz switch with asymmetric electrodes

被引：17

作者：

Li, Yan ^{[1
,2
]}

Yu, Hui ^{[1
]}

Qiu, Xinyu ^{[1
]}

Dai, Tingge ^{[1
]}

Jiang, Jianfei ^{[1
]}

Wang, Gencheng ^{[1
]}

Zhang, Qiang ^{[1
]}

Qin, Yali ^{[2
]}

Yang, Jianyi ^{[1
]}

Jiang, Xiaoqing ^{[1
]}

机构：

[1] Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310014, Zhejiang, Peoples R China

来源：

SCIENTIFIC REPORTS | 2018年 / 8卷

基金：

中国国家自然科学基金;

关键词：

COHERENT PERFECT ABSORPTION; FLOATING-GATE MEMORY; TRANSMISSION; MODULATION; DEVICE;

D O I：

10.1038/s41598-018-20047-3

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We propose a nonvolatile terahertz (THz) switch which is able to perform the switching with transient stimulus. The device utilizes graphene as its floating-gate layer, which changes the transmissivity of THz signal by trapping the tunneling charges. The conventional top-down electrode configuration is replaced by a left-right electrode configuration, so THz signals could transmit through this device with the transmissivity being controlled by voltage pulses. The two electrodes are made of metals with different work functions. The resultant asymmetrical energy band structure ensures that both electrical programming and erasing are viable. With the aid of localized surface plasmon resonances in graphene ribbon arrays, the modulation depth is 89% provided that the Femi level of graphene is tuned between 0 and 0.2 eV by proper voltage pulses.

引用

页数：9

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