Investigation on etch characteristics of MgO thin films using a HBr/Ar plasma

被引：6

作者：

Kim, Eun Ho ^{[1
]}

Bin Xiao, Yu ^{[1
]}

Kong, Seon Mi ^{[1
]}

Chung, Chee Won ^{[1
]}

机构：

[1] Inha Univ, Dept Chem Engn, Inchon 402751, South Korea

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 20期

关键词：

MgO thin films; Ti hard mask; Magnetic tunnel junction; Inductively coupled plasma reactive ion etching; HBr/Ar gas; INDUCTIVELY-COUPLED PLASMA;

D O I：

10.1016/j.tsf.2011.04.057

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Etch characteristics of MgO thin films were investigated using an inductively coupled plasma reactive ion etcher in a HBr/Ar plasma. As the concentration of HBr gas increased, the etch rate of MgO thin films gradually decreased, but the etch rate of Ti hard mask showed initial decrease and then increased with increasing HBr concentration. The etch profile of MgO films was improved with increasing HBr concentration and a high degree of anisotropy in etch profile was achieved at 30% HBr/Ar gas. Based on the etch characteristics and surface analysis by X-ray photoelectron spectroscopy, it can be concluded that the etch mechanism of MgO thin films in a HBr/Ar gas does not follow the reactive ion etch mechanism but the sputter etching mechanism with the assistance of chemical reactions on the film surfaces. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：6820 / 6823

页数：4

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