Control of bulk and edge screening effects in two-dimensional arrays of ungated field emitters

被引:30
作者
Harris, John R. [1 ]
Jensen, Kevin L. [2 ]
Tang, Wilkin [3 ]
Shiffler, Donald A. [3 ]
机构
[1] US Navy Reserve, Navy Operat Support Ctr Kansas City, Kansas City, MO 64130 USA
[2] Naval Res Lab, Code 6364, Washington, DC 20375 USA
[3] Air Force Res Lab, Directed Energy Directorate, Albuquerque, NM 87117 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2016年 / 34卷 / 04期
关键词
EMISSION PROPERTIES; SURFACE FLASHOVER; ELECTRONS; CATHODE; COLD;
D O I
10.1116/1.4953076
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In arrays of ungated field emitters, nearby emitters introduce a screening effect, reducing each emitter's field enhancement factor below its value in isolation. At the edge of the array, however, the strength of this screening effect is reduced because the number of nearby emitters is reduced, leading to a variation in the emitted current with position in the array. This may have detrimental effects on the emitted beam properties and lead to increased damage to the emitters near the edge due to increased current, heating, and ion bombardment. In this work, the authors apply line and point charge models to study the impact of screening on the performance of two-dimensional field emitter arrays, with an emphasis on quantifying the extent of the edge enhancement effect, and on assessing potential means to control it.
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页数:10
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